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Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)

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Abstract

A simple physics-based three-dimensional (3-D) analytical model for AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs) is presented. The model accurately predicts the short-channel effects (SCEs) in the channel region for various device dimensions, viz. channel length and width, by solving the three-dimensional Poisson equation. The effects of the barrier layer (AlInSb) thickness and the high doping concentration on the threshold voltage are also considered. Analytical expressions for the surface potential and threshold voltage are derived, and the analytical results closely match those obtained from Sentaurus technology computer-aided design (TCAD) simulations. The drain current and transconductance of the AlInSb/AlSb/InSb double-gate HEMT device are compared with experimental data obtained for a quantum-well field-effect transistor (QWFET). The proposed AlInSb/AlSb/InSb double-gate HEMT shows excellent properties for use in high-speed and low-power applications.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Sethu Institute of Technology, Virudhunagar, India

    T. Venish Kumar

  2. Department of Electronics and Communication Engineering, Thiagarajar College of Engineering and Technology, Madurai, India

    N. B. Balamurugan

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  1. T. Venish Kumar
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  2. N. B. Balamurugan
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Correspondence to T. Venish Kumar.

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Venish Kumar, T., Balamurugan, N.B. Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs). J Comput Electron 19, 1107–1115 (2020). https://doi.org/10.1007/s10825-020-01498-2

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