Abstract

The development of new dielectric materials for insulating layer of interconnects with low loss on high frequencies (low-k) is one of main directions of modern microelectronics. At present, various modifications of SiO₂-based dielectric structures standard for modern integrated circuits differ in composition and morphological characteristics are being studied. In this work, the dielectric loss of thin-film SiO₂ samples on Al substrate are studied by methods of terahertz (THz) and IR spectroscopy. It is found that the spectra of such structures are substantially different, including the resonant Berreman modes, as compared to the spectra of a bulk fused silica.

中文翻译：

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在THz–IR范围内，薄膜SiO 2样品在Al上的介电损耗

摘要

在高频（low- k）上具有低损耗的互连绝缘层的新型介电材料的开发是现代微电子学的主要方向之一。目前，正在研究用于现代集成电路的基于SiO ₂的介电结构标准的各种修改，其组成和形态特征不同。在这项工作中，通过太赫兹（THz）和红外光谱法研究了Al基体上薄膜SiO ₂样品的介电损耗。已经发现，与本体熔融二氧化硅的光谱相比，这种结构的光谱基本上不同，包括共振贝雷曼模式。