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Dielectric Loss of Thin-Film SiO2 Samples on Al in THz–IR Range

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Abstract

The development of new dielectric materials for insulating layer of interconnects with low loss on high frequencies (low-k) is one of main directions of modern microelectronics. At present, various modifications of SiO2-based dielectric structures standard for modern integrated circuits differ in composition and morphological characteristics are being studied. In this work, the dielectric loss of thin-film SiO2 samples on Al substrate are studied by methods of terahertz (THz) and IR spectroscopy. It is found that the spectra of such structures are substantially different, including the resonant Berreman modes, as compared to the spectra of a bulk fused silica.

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Funding

This work was supported in part by the Russian Foundation for Basic Research, project no. 18-29-27010 MK.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    G. A. Komandin, V. S. Nozdrin, A. A. Pronin, O. E. Porodinkov, V. B. Anzin & I. E. Spektor

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  1. G. A. Komandin
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  2. V. S. Nozdrin
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  3. A. A. Pronin
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  4. O. E. Porodinkov
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  5. V. B. Anzin
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  6. I. E. Spektor
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Corresponding author

Correspondence to O. E. Porodinkov.

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Translated by Yu. Ryzhkov

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Komandin, G.A., Nozdrin, V.S., Pronin, A.A. et al. Dielectric Loss of Thin-Film SiO2 Samples on Al in THz–IR Range. Phys. Solid State 62, 267–272 (2020). https://doi.org/10.1134/S1063783420020158

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