Abstract

Results of numerical simulation and experimental data on recording azimuthal angular dependences of a second-harmonic signal reflected from Cd_xHg_1 – xTe structures and GaAs substrates at normal incidence of probe laser radiation on the sample and azimuthal rotation of its polarization plane have been compared. It is found proceeding from the results of studying (013)GaAs substrates and CdTe|ZnTe|GaAs buffer layers that deviations from the (013) surface orientation were 1°–3° (in crystallophysical angles Θ and φ) for GaAs substrates and up to 8° for CdTe|ZnTe|GaAs buffer layers; the magnitude of the second-harmonic signal from the buffer layers can be assumed inversely proportional to the FWHM of X-ray rocking curves. It is shown based on the experimental data that components of the nonlinear susceptibility tensor χ_xyz(ω) of the Cd_xHg_1 – xTe crystal structure are much larger than those for CdTe and GaAs.

中文翻译：

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利用反射几何中的探测-辐射二次谐波的产生方法表征GaAs衬底上Cd x Hg 1-x Te结构的晶体参数的可能性

摘要

记录从Cd _x Hg _{1 –  x}反射的二次谐波信号的方位角相关性的数值模拟和实验数据结果比较了在探针激光辐射垂直入射到样品上时Te结构和GaAs衬底及其偏振面的方位角旋转。从研究（013）GaAs衬底和CdTe | ZnTe | GaAs缓冲层的结果可以发现，对于GaAs衬底及更高版本，与（013）表面取向的偏差为1°–3°（在晶体物理角Θ和φ中）。 CdTe | ZnTe | GaAs缓冲层为8°；可以假设来自缓冲层的二次谐波信号的大小与X射线摇摆曲线的FWHM成反比。根据实验数据表明，Cd _x Hg _{1 – x}的非线性磁化率张量_χxyz（ω）的分量 Te的晶体结构比CdTe和GaAs大得多。