Neuromorphic computing is an emerging field of investigation for new algorithm solutions and daily life applications. We propose a novel approach to achieve an operator which uses a parasitic bipolar metal oxide semiconductor filed effect transistor combined with a capacitor and a n-type metal oxide semiconductor filed effect transistor. The resulting BIMOS-based leaky-integrate-and-fire spiking neuron circuit is integrated on thin silicon film in 28 nm high-k/metal-gate advanced complementary metal oxide semiconductor technology. The proof of concept is brought by 3-dimensional technology computer-aided design numerical simulations, and then validated by electrical characterization of the two-transistors-one-capacitor demonstrator. The underlying physical phenomena involved in the spiking mechanism are identified, explained and modelled. Low power consumption is obtained. In addition, the spiking neuron device benefits from intrinsic electro-static discharge robustness.

神经形态计算是新算法解决方案和日常生活应用研究的新兴领域。我们提出一种新颖的方法来实现一种将寄生双极金属氧化物半导体场效应晶体管与电容器和n型金属氧化物半导体场效应晶体管相结合的运算器。最终的基于BIMOS的泄漏集成和发射尖峰神经元电路以28 nm高k /金属栅高级互补金属氧化物半导体技术集成在硅薄膜上。概念验证由3维技术计算机辅助设计数值模拟带来，然后通过两晶体管一电容器演示器的电特性验证。识别，解释和建模了与尖峰机制有关的潜在物理现象。获得低功耗。此外，尖峰神经元设备还具有固有的静电放电鲁棒性。