High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at high temperature (>250 °C) for each layer, severely limiting both the throughput and substrate choice. Here, we report high-speed photonic curing of ZrO₂ dielectric thin films on flexible plastic substrates. The curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts, i.e. self-aligned patterning. Metal–insulator–metal capacitors using two layers of ZrO₂ films photonically cured in just 100 s per layer show non-dispersive capacitance–frequency behaviour from 10² to 10⁶ Hz, high areal capacitance of 200 nF/cm² and low dissipation factor of 0.03 at 10⁵ Hz, leakage current density of ~10⁻⁷ A/cm² at an applied field of 2 MV/cm, and a breakdown field of nearly 8 MV/cm. Using an upgraded tool, similar dielectric properties are achieved in as short as 100 ms using a single pulse of light, revealing a pathway to oxide film processing beyond 30 m/min.

氧化物电子产品的高通量制造将实现从大面积显示器到柔性医疗设备和低成本太阳能电池板的新应用。然而，基于溶液的前体的高质量氧化膜通常需要在高温下（> 250°C）对每一层进行20分钟或更长时间的热退火，这严重限制了生产率和基板选择。在这里，我们报道了在柔性塑料基板上ZrO ₂介电薄膜的高速光子固化。通过使用阴影掩模图案化或调整条件以仅在下面的金属触点顶部转化氧化物，即自对准图案化，可以同时实现固化和图案化过程。使用两层ZrO _2的金属-绝缘体-金属电容器每层光固化时间仅为100 s的薄膜显示出10 ²至10 ⁶  Hz的非分散电容频率特性，200 nF / cm ^2的高面电容和10 ⁵  Hz的0.03的低耗散因数，〜的漏电流密度10 ^-7  A / cm ²的施加场为2 MV / cm，击穿场为近8 MV / cm。使用升级的工具，使用单个光脉冲，可在短至100 ms的时间内实现类似的介电性能，从而揭示了以超过30 m / min的速度进行氧化膜加工的途径。