Abstract The InGaN/GaN Schottky solar cell was numerically investigated under AM1.5 illuminations using Silvaco-Atlas software to reach high efficiencies. According to the simulation results, when the indium composition (xIn) exceeds 54%, the conversion efficiency drops sharply and a large valence band offset appears. This failure can be explained by the recombination of the generated carriers before their collection due to the large lattice mismatch in high indium compositions. To overcome this inability, an effective process is established to ameliorate the interface between n-InGaN and n-GaN and to enhance the Schottky solar cell performances. The obtained results predict a clear enhancement of the efficiency from 2.25% to 18.48% at xIn = 60%. An optimization of this structure achieves an important efficiency of 21.69% for the optimal value of xIn = 54%, metal work function Wf = 6.3 eV, doping concentration Nd = 2 × 1017 cm−3 and an InGaN layer thickness TInGaN = 0.18 μm.

中文翻译：

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InGaN肖特基太阳能电池的模拟和优化以提高界面质量

摘要 使用 Silvaco-Atlas 软件在 AM1.5 照明下对 InGaN/GaN 肖特基太阳能电池进行了数值研究，以达到高效率。根据模拟结果，当铟组分（xIn）超过54%时，转换效率急剧下降，出现较大的价带偏移。这种失败可以通过生成的载流子在它们收集之前的重组来解释，这是由于高铟成分中的大晶格失配造成的。为了克服这种无力，建立了一种有效的工艺来改善 n-InGaN 和 n-GaN 之间的界面并提高肖特基太阳能电池的性能。获得的结果预测在 xIn = 60% 时效率从 2.25% 明显提高到 18.48%。这种结构的优化实现了 21 的重要效率。