Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality

https://doi.org/10.1016/j.spmi.2020.106539Get rights and content

Highlights

  • The InGaN/GaN Schottky solar cell was numerically investigated under AM1.5 illuminations using Silvaco-Atlas .

  • When the indium composition x exceeds 0.54, the conversion efficiency drop in and a large valence band offset appears.

  • This failure of efficiency is due to the Indium segregation.

  • A compositionally graded layer sandwiched between n-InGaN and n-GaN is investigated to reduce the valence band offset.

  • An important efficiency of 21.69% is achieved for the optimal value of Indium composition x = 0.54

Abstract

The InGaN/GaN Schottky solar cell was numerically investigated under AM1.5 illuminations using Silvaco-Atlas software to reach high efficiencies. According to the simulation results, when the indium composition (xIn) exceeds 54%, the conversion efficiency drops sharply and a large valence band offset appears. This failure can be explained by the recombination of the generated carriers before their collection due to the large lattice mismatch in high indium compositions. To overcome this inability, an effective process is established to ameliorate the interface between n-InGaN and n-GaN and to enhance the Schottky solar cell performances. The obtained results predict a clear enhancement of the efficiency from 2.25% to 18.48% at xIn = 60%. An optimization of this structure achieves an important efficiency of 21.69% for the optimal value of xIn = 54%, metal work function Wf = 6.3 eV, doping concentration Nd = 2 × 1017 cm−3 and an InGaN layer thickness TInGaN = 0.18 μm.

Introduction

Over the past few decades, III-N semiconductors have been widely used in optoelectronics [[1], [2], [3], [4], [5]]. In particular, the Indium Gallium Nitride (InGaN) has been considered one of the pivotal materials for photovoltaic applications [6].

The InxGa1-xN has emerged owing to its bandgap energy that can be adjusted by the Indium content. In essence, the bandgap energy is between 0.68 eV (1800 nm) for xIn = 1 and 3.44 eV (360 nm) for xIn = 0 [[7], [8], [9], [10]], which makes the InGaN a promising material for solar cells [11,12]. Besides, its electrical and optical properties such as high tolerance to radiation [13], high mobility [14] and high absorption coefficient [15], make this material a relevant choice for photovoltaic applications [16]. So, to enhance solar efficiency, the knowledge of InGaN properties is required. The major challenge is to obtain a good crystal quality of InGaN [6]. However, the scientific researchers have reported in Ref. [[17], [18], [19]], the failure to grow a p-InGaN layer because of the high residual density of donors [15]. so that, the application of Ohmic contact on p-InGaN material seems difficult [16]. Moreover, it is notable that the p-n and the p-i-n InGaN is still unable to exceed the photovoltaic efficiencies of both III-Nitride and silicon materials [20].

Accordingly, we propose to replace the p-layer by a Schottky contact (Schottky solar cell) to solve these critical problems. This innovation is widely used for III-Nitride based power devices and photodetectors [14]. Whereas it is exceptionally new for the based-InGaN photovoltaic technology. There have been a few authoritative investigations that reported the realization of functional Schottky solar cells [[21], [22], [23], [24]]. Recently, Sid Ould Saad et al. [25] and Abdoulwahab Adaine et al. [26] have realized the first complete numerical simulations toward that path. Yet, they did not take into account the large band offset issue [19,[27], [28], [29]] and the large lattice mismatch between GaN and InGaN effect [30].

Experimentally, the InGaN layer should be thicker than 400 nm aiming to both ensure an important absorption of photons and high efficiency for solar applications [29]. Nevertheless, thick layers of InGaN involve a high indium concentration that presents a limitation in the experimental process [29]. Indeed, the Indium tends to accumulate in the active and a large valence band offset appears which degrades the performance of the cells [19,29,31]. The Indium content is selected fundamentally by the selection of band offset among GaN and InN (from 0.5eV [32] to 1.1eV [33]. This broad scope is affirmed experimentally and theoretically, which indicates a hard determination of the content where a collection of the carriers and J-V characteristics are influenced [8]. A numerical advanced technique and different physical models are investigated to approach our structure to reality. This study is focused on the effects of (i) piezoelectric field, (ii) the lattice mismatch and (iii) the recombination of photo-generated carriers in the hetero-interface on the Schottky solar cells performances. To overcome these problems, several experimenters have used the grading procedure in the purpose of reducing the dislocations, the lattice mismatch and the surface recombination losses in the investigated solar cells [[34], [35], [36], [37], [38], [39]].

In this study, we have exclusively studied the Schottky n-InGaN/n-GaN solar cell with adding a compositionally graded layer between GaN and InGaN, to enhance the photovoltaic performances and to ameliorate the interfaces. All simulations in this study were performed using Silvaco-Atlas software.

Section snippets

Electrical properties

The electrical properties of InGaN are deduced from a linear interpolation (Vegard's law) between the values of InN and GaN. Except for the gap energy and the electronic affinity, we must add a curvature correction defined by the bowing parameter 1.43 and 0.8, respectively [19]. Vegard's law is expressed as:AInxGa1xN=xAInN+(1x)AGaNbx(1x),where A is the parameters cited in Table 1, b is the bowing parameter and x is the Indium concentration.

Table 1 shows bandgap Eg, the effective density of

Simulation part

This work was accomplished through simulation using the Silvaco-Atlas simulator. This software is based on a finite element method and can solve Poisson and Continuity equations using the standard drift-diffusion model. It includes the decoupled Gummel's and the coupled Newton-Raphson methods. Accordingly, the dense mesh should be used in critical areas (the interfaces between the different materials) to get good resolution and convergence. To get the best solar cell performance, our strategy

The first part

First, we have optimized two parameters: The Indium content in InxGa1-xNx (0 < x < 0.75) and the work function of the Schottky contact (5.1 eV < Wf < 6.3 eV), whose curves are normalized to 1. The other parameters such as doping concentration and thickness are fixed.

Fig. 2 illustrates the metal/n-InGaN/n-GaN Schottky solar cell efficiency versus Indium content for different work functions. At first glance, the increase of Indium content initially leads to an increase in solar cell efficiency.

Conclusion

The new Schottky solar cell with a compositionally graded layer is studied using numerical advanced technique and realistic physical models. Our investigation has focused on the band offset effect between n-GaN/n-InGaN and the enhancement of the interface quality. Using parameters extracted from recent published works, we have obtained an important efficiency of 21.69% for the optimal values of Wf = 6.3 eV, xIn = 54%, TInGaN = 0.18 μm and Nd = 2 × 1017 cm−3. Moreover, it is notable that the

CRediT authorship contribution statement

Abderrahim Khettou: Writing - original draft, Conceptualization, Methodology, Software, Data curation. Imen Zeydi: Writing - review & editing. Mohammed Chellali: Supervision, Project administration, Methodology, Conceptualization. Marwa Ben Arbia: Writing - review & editing, Data curation, Conceptualization. Sedik Mansouri: Supervision, Project administration, Methodology, Conceptualization. Hicham Helal: Software, Validation, Formal analysis. Hassen Maaref: Data curation, Investigation,

Declaration of competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Acknowledgment

The authors wish to acknowledge the significant contributions of Ms. Mazari Halima, Ms. Kheira Ameur and Mr. Taibi Brahim (University of Sidi Bel-Abbes, Algeria), Mr. Smiri Badreddine (University of Monastir, Tunisia), Mr. Khirouni Kamel (University of Gabes, Tunisia) and the General Directorate of Scientific Research and Technological Development (GDSRTD).

References (85)

  • T. Matsuoka

    Progress in nitride semiconductors from GaN to InN—MOVPE growth and characteristics

    Superlattice. Microst.

    (2005)
  • Y. Marouf et al.

    Theoretical design and performance of InxGa1-xN single junction solar cell

    Optik

    (2018)
  • B. Smiri et al.

    Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity

    J. Alloys Compd.

    (2018)
  • B. Smiri et al.

    Effect of substrate polarity on the optical and vibrational properties of (311) A and (311) B oriented InAlAs/InP heterostructures

    Phys. E Low-dimens. Syst. Nanostruct.

    (2019)
  • C.A. Fabien et al.

    Low-temperature growth of InGaN films over the entire composition range by MBE

    J. Cryst. Growth

    (2015)
  • J. Egley et al.

    Strain effects on device characteristics: implementation in drift-diffusion simulators

    Solid State Electron.

    (1993)
  • B. Smiri et al.

    Effect of V/III ratio on the optical properties of (3 1 1) A and (3 1 1) B oriented InAlAs/InP heterostructures

    Results in Physics

    (2019)
  • H.-W. Chen et al.

    Effect of Pt/TiO2 characteristics on temporal behavior of o-cresol decomposition by visible light-induced photocatalysis

    Water Res.

    (2007)
  • D. Haridas et al.

    Effect of thickness of platinum catalyst clusters on response of SnO2 thin film sensor for LPG

    Sensor. Actuator. B Chem.

    (2011)
  • H. Rotermund et al.

    Investigation of surfaces by scanning photoemission microscopy

    J. Electron. Spectrosc. Relat. Phenom.

    (1990)
  • M. Kaack et al.

    Determination of the work functions of Pt (111) and Ir (111) beyond 1100 K surface temperature

    Surf. Sci.

    (1995)
  • K. Kumakura et al.

    Minority carrier diffusion lengths in MOVPE-grown n-and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

    J. Cryst. Growth

    (2007)
  • I. Vurgaftman et al.

    Band parameters for III–V compound semiconductors and their alloys

    J. Appl. Phys.

    (2001)
  • P.G. Moses et al.

    Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

    J. Chem. Phys.

    (2011)
  • P.G. Moses et al.

    Band bowing and band alignment in InGaN alloys

    Appl. Phys. Lett.

    (2010)
  • M.-J. Jeng et al.

    Temperature dependences of InxGa1− xN multiple quantum well solar cells

    J. Phys. Appl. Phys.

    (2009)
  • J. Wu et al.

    Small band gap bowing in in 1− x Ga x N alloys

    Appl. Phys. Lett.

    (2002)
  • J. Wu

    When group-III nitrides go infrared: new properties and perspectives

    J. Appl. Phys.

    (2009)
  • X. Zhang et al.

    Simulation of In0. 65Ga0. 35 N single-junction solar cell

    J. Phys. Appl. Phys.

    (2007)
  • O. Jani et al.

    Design and characterization of Ga N∕ in Ga N solar cells

    Appl. Phys. Lett.

    (2007)
  • J. Wu et al.

    Superior radiation resistance of in 1− x Ga x N alloys: full-solar-spectrum photovoltaic material system

    J. Appl. Phys.

    (2003)
  • S.O.S. Hamady

    Simulation numérique et caractérisation de matériaux semi-conducteurs III-N pour détecteurs ultraviolet et cellules solaires

    (2017)
  • A.Y. Polyakov et al.

    Radiation effects in GaN materials and devices

    J. Mater. Chem. C

    (2013)
  • V.M. Polyakov et al.

    Low-field electron mobility in wurtzite InN

    Appl. Phys. Lett.

    (2006)
  • R. Dahal et al.

    InGaN/GaN multiple quantum well solar cells with long operating wavelengths

    Appl. Phys. Lett.

    (2009)
  • A.G. Bhuiyan et al.

    InGaN solar cells: present state of the art and important challenges

    IEEE Journal of photovoltaics

    (2012)
  • G. Brown et al.

    Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect

    Appl. Phys. Lett.

    (2008)
  • P. King et al.

    Variation of band bending at the surface of Mg-doped InGaN: evidence of p-type conductivity across the composition range

    Phys. Rev. B

    (2007)
  • N.G. Toledo et al.

    InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

    J. Appl. Phys.

    (2012)
  • X. Jun-Jun et al.

    Au/Pt/InGaN/GaN heterostructure Schottky prototype solar cell

    Chin. Phys. Lett.

    (2009)
  • P. Mahala et al.

    Metal/InGaN Schottky junction solar cells: an analytical approach

    Appl. Phys. A

    (2015)
  • Y. Li et al.

    Schottky junction solar cells based on graphene with different numbers of layers

    Appl. Phys. Lett.

    (2014)
  • Cited by (0)

    View full text