This paper presented a fully depleted silicon on insulator (FD-SOI) MOSFET in nano scale size with deployment the quasi two dimensional β -Ga 2 O 3 material to improvement electrical properties. The main idea of the proposed structure is embedding a layer of the β -Ga 2 O 3 in the drain region. Due to the β -Ga 2 O 3 material features, the electric field distribution near the drain and gate side will be change and peak of the electric field of the proposed structure is diminish. The embedded layer of the β -Ga 2 O 3 material in our work has an important effects on the electrical and thermal characteristics. In this paper, characteristics of the proposed structure is compared with the prevalent SOI and improvement of characteristics in our work are shown. The features such as the electric field, the potential distribution, the sub-threshold slope, the kink effect, the self-heating ...

中文翻译：

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β-Ga 2 O 3层研究沟道长度为20 nm的SOI MOSFET中的短沟道效应

本文提出了一种纳米级尺寸的完全耗尽的绝缘体上硅（FD-SOI）MOSFET，并采用了准二维β-Ga 2 O 3材料来改善电性能。提出的结构的主要思想是在漏极区中嵌入一层β-Ga 2 O 3。由于β-Ga 2 O 3的材料特性，漏极和栅极附近的电场分布将发生变化，所提出结构的电场峰值将减小。在我们的工作中，β-Ga 2 O 3材料的嵌入层对电和热特性产生重要影响。在本文中，将所提出的结构的特性与流行的SOI进行了比较，并显示了我们工作中特性的改进。诸如电场，电势分布，亚阈值斜率，