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Excellent thermoelectric performance in weak-coupling molecular junctions with electrode doping and electrochemical gating
Science China Physics, Mechanics & Astronomy ( IF 6.4 ) Pub Date : 2020-03-18 , DOI: 10.1007/s11433-019-1528-y
Dan Wu , Xuan-Hao Cao , Pin-Zhen Jia , Yu-Jia Zeng , Ye-Xin Feng , Li-Ming Tang , Wu-Xing Zhou , Ke-Qiu Chen

Excellent thermoelectric performance in molecular junctions requires a high power factor, a low thermal conductance, and a maximum figure of merit (ZT) near the Fermi level. In the present work, we used density functional theory in combination with a nonequilibrium Green’s function to investigate the thermoelectric performance of carbon chain-graphene junctions with both strong-coupling and weak-coupling contact between the electrodes and the molecules. The results revealed that a room temperature ZT of 4 could be obtained for the weak-coupling molecular junction, approximately one order of magnitude higher than that reached by the strong-coupling junction. The reason for this is that strong interfacial scattering suppresses most of the phonon modes in weak-coupling systems, resulting in ultralow phonon thermal conductance. The influence of electrode width, electrode doping, and electrochemical gating on the thermoelectric performance of the weak-coupling system was also investigated, and the results revealed that an excellent thermoelectric performance can be obtained near the Fermi level.

中文翻译:

在电极耦合和电化学浇铸的弱耦合分子结中具有出色的热电性能

分子结中的出色热电性能要求高功率因数,低热导率以及在费米能级附近的最大品质因数(ZT)。在当前的工作中,我们结合了密度泛函理论和非平衡格林函数来研究碳链-石墨烯结在电极与分子之间具有强耦合和弱耦合接触的热电性能。结果显示,室温ZT对于弱耦合分子结,可得到4的四分之一,比强耦合结所达到的大约高1个数量级。其原因是,强界面散射会抑制弱耦合系统中的大多数声子模,从而产生超低声子热导率。还研究了电极宽度,电极掺杂和电化学门控对弱耦合系统热电性能的影响,结果表明,在费米能级附近可以获得优异的热电性能。
更新日期:2020-03-18
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