This work demonstrates the systematic investigation of the effects of high temperature on key performance parameters including speed, sensitivity, stability, and repeatability of a 3C-SiC/Si ultraviolet (UV) photodetector (PD) at various operating temperatures ranging from 50°C to 200°C. The device with very low dark current (∼ 0.08 pA) exhibited high sensitivity of 4466 and fast rise and decay times of 0.34 s and 0.30 s at 50°C to exposure of 254 nm UV light at a bias voltage of 20 V. Additionally, the device showed very good performance at a low operating voltage of 0.5 V and high temperature of 200°C, with a rise time of 2.68 s and decay time of 1.44 s, while maintaining good stability and repeatability. The slight decrease in performance (sensitivity from 4466 to 932) at 200°C was attributed to the increase in lattice scattering at elevated temperatures, leading to a decrease in carrier mobility. Moreover, the device was fabricated using a very cost-effective process flow. Consequently, this study can contribute to the development of low-power, fast, highly sensitive, and cost-effective 3C-SiC UVPDs for use in high-temperature photonic applications.

这项工作证明了在3°C-SiC / Si紫外（UV）光电探测器（PD）在50°C至50°C的各种工作温度范围内，高温对关键性能参数（包括速度，灵敏度，稳定性和可重复性）的影响的系统研究。 200℃。具有非常低的暗电流（〜0.08 pA）的器件在20°C的偏置电压下暴露于254 nm UV光下，在50°C下具有4466的高灵敏度和0.34 s和0.30 s的快速上升和衰减时间。该器件在0.5 V的低工作电压和200°C的高温下表现出非常好的性能，上升时间为2.68 s，衰减时间为1.44 s，同时保持了良好的稳定性和可重复性。在200°C下性能略有下降（灵敏度从4466降至932），这归因于高温下晶格散射的增加，导致载流子迁移率降低。此外，使用非常经济高效的工艺流程制造了该器件。因此，这项研究可有助于开发用于高温光子应用的低功率，快速，高度灵敏且具有成本效益的3C-SiC UVPD。