Abstract

The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (V_th) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS₂ exhibit nearly negligible V_th roll-off at large source-drain bias, and the D-FBG multilayer WSe₂ transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed V_th roll-off and ambipolar transport for high-performance and low-power logic applications.

中文翻译：

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多层过渡金属二硫化二氢反馈栅晶体管中的阈值电压滚降和双极性传输受到抑制

摘要

作为场效应晶体管（FET）的沟道材料，层状半导体过渡金属二硫化碳（s-TMD）引起了人们的极大兴趣。但是，多层s-TMD晶体管通常表现出相当大的阈值电压（V _th）在高源漏偏置下的漂移和双极性行为，这对于现代数字电子学来说是不希望的。在这里，我们报告了双反馈门（FBG）晶体管的设计和制造，即源FBG（S-FBG）和漏FBG（D-FBG），以应对这些挑战。FBG晶体管与普通晶体管的不同之处在于，它包括一个额外的反馈门，该栅极通过在s-TMD上的氧化钇电介质上方延伸和重叠源/漏电极而直接连接到源/漏电极。我们表明，基于多层的MoS的S-FBG晶体管₂显示出可以忽略不计接近V_个滚降在大的源-漏极偏压，并且d-FBG多层WSE ₂根据漏极偏置的极性，可以将晶体管定制为n型或p型传输。双FBG结构提供了有效的策略，以裁缝多层S-TMD晶体管抑制了V_次的滚降和用于高性能和低功耗逻辑应用双极传输。