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Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

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Abstract

The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (Vth) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS2 exhibit nearly negligible Vth roll-off at large source-drain bias, and the D-FBG multilayer WSe2 transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed Vth roll-off and ambipolar transport for high-performance and low-power logic applications.

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Acknowledgements

X. F. D. acknowledges financial support by ONR through grant number N000141812707. Y. H. acknowledges the financial support from National Science Foundation EFRI-1433541.

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Author notes

  1. Yang Liu and Peiqi Wang contributed equally to this work.

Authors and Affiliations

  1. Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA

    Yang Liu, Peiqi Wang, Yiliu Wang & Xiangfeng Duan

  2. Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA

    Peiqi Wang & Yu Huang

  3. California Nanosystems Institute, University of California, Los Angeles, Los Angeles, CA, 90095, USA

    Xiangfeng Duan

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  1. Yang Liu
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Correspondence to Xiangfeng Duan.

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12274_2020_2760_MOESM1_ESM.pdf

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

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Liu, Y., Wang, P., Wang, Y. et al. Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors. Nano Res. 13, 1943–1947 (2020). https://doi.org/10.1007/s12274-020-2760-6

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  • DOI: https://doi.org/10.1007/s12274-020-2760-6

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