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Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Physical Review B ( IF 3.2 ) Pub Date : 2020-03-23 , DOI: 10.1103/physrevb.101.094429
M. Wang , C. Andrews , S. Reimers , O. J. Amin , P. Wadley , R. P. Campion , S. F. Poole , J. Felton , K. W. Edmonds , B. L. Gallagher , A. W. Rushforth , O. Makarovsky , K. Gas , M. Sawicki , D. Kriegner , J. Zubáč , K. Olejník , V. Novák , T. Jungwirth , M. Shahrokhvand , U. Zeitler , S. S. Dhesi , F. Maccherozzi

We report magnetic-field-induced rotation of the antiferromagnetic Néel vector in epitaxial CuMnAs thin films. First, using soft x-ray magnetic linear dichroism spectroscopy as well as magnetometry, we demonstrate spin-flop switching and continuous spin reorientation in films with uniaxial and biaxial magnetic anisotropies, respectively, for applied magnetic fields of the order of 2 T. The remnant antiferromagnetic domain configurations are determined using x-ray photoemission electron microscopy. Next, we show that the Néel vector reorientations are manifested in the longitudinal and transverse anisotropic magnetoresistance. Dependencies of the electrical resistance on the orientation of the Néel vector with respect to both the electrical current direction and the crystal symmetry are identified, including a weak fourth-order term evident at high magnetic fields. The results provide characterization of key parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, and spin-flop field in epitaxial films of tetragonal CuMnAs, a candidate material for antiferromagnetic spintronics.

中文翻译:

CuMnAs中的自旋衰减和晶体各向异性磁阻

我们报告了外磁CuMnAs薄膜中反铁磁Néel矢量的磁场诱导旋转。首先,使用软X射线磁性线性二向色光谱法和磁力计,我们分别证明了在具有2 T数量级的施加磁场的情况下,具有单轴和双轴磁各向异性的薄膜中的自旋开关和连续自旋重新取向。反铁磁畴结构是使用X射线光电子显微镜确定的。接下来,我们证明Néel向量的重新定向在纵向和横向各向异性磁阻中得到体现。确定了电阻对Néel向量相对于电流方向和晶体对称性的方向的依赖性,包括在高磁场下明显的弱四阶项。结果提供了关键参数的表征,这些参数包括各向异性的四方CuMnAs外延膜中的各向异性磁阻系数,磁晶各向异性和自旋翻转场,这是反铁磁自旋电子学的候选材料。
更新日期:2020-03-24
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