Surface modification of pure Ti is performed with the addition of aminopropyl trimethoxy-silane (APS) in the anodic electrolyte to obtain plasma electrolytic oxidation (PEO) ceramic films at a median voltage of 200 V. The addition of silane in Na 2 SiO 3 solution does not change the phase compositions of the PEO films while promoting the faster growth of both rutile and anatase, meanwhile smoother and thicker ceramic films with more regular pores on the outer layers are obtained as reflected by the X-ray diffraction spectra (XRD) and scanning electron microscopy (SEM) results, respectively. The wear resistance in dry friction condition of the PEO films with silane addition is improved as seen from their friction coefficient and abrasive track image; the increase in corrosion potential ( E corr ) and decrease in corrosion current density ( I corr ) suggest the improvement of their resisting ability to corrosive media, attributing to the formation of compacter inner and outer layer films as supported by the electrochemical impedance spectroscopy. The results of attenuated total reflection-Fourier transform infrared spectra (ATR-FTIR) and X-ray photoelectron spectra (XPS) reveal that APS exists on the surfaces and among the defects of ceramic films by adsorption, self-condensation and/or chemical linkage (Ti–O–Si) as various states, therefore their existence and filling effects result in the improvement in their abrasive and corrosive resistances.

中文翻译：

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电解液中添加硅烷在纯钛表面形成等离子电解氧化膜的形貌、耐磨性和耐蚀性研究

在阳极电解液中加入氨丙基三甲氧基硅烷 (APS) 对纯钛进行表面改性，得到中值电压为 200 V 的等离子体电解氧化 (PEO) 陶瓷薄膜。 在 Na 2 SiO 3 溶液中加入硅烷不改变PEO薄膜的相组成，同时促进金红石和锐钛矿的更快生长，同时获得更光滑、更厚的陶瓷薄膜，外层孔隙更规则，X射线衍射光谱（XRD）和分别为扫描电子显微镜 (SEM) 结果。从摩擦系数和磨粒轨迹图像可以看出，添加硅烷的 PEO 薄膜在干摩擦条件下的耐磨性得到改善；腐蚀电位 (E corr ) 的增加和腐蚀电流密度 (I corr ) 的降低表明它们对腐蚀介质的抵抗能力提高，归因于电化学阻抗谱支持的更致密的内层和外层膜的形成。衰减全反射傅里叶变换红外光谱（ATR-FTIR）和X射线光电子光谱（XPS）结果表明，APS通过吸附、自缩合和/或化学键存在于陶瓷薄膜的表面和缺陷中(Ti-O-Si) 作为各种状态，因此它们的存在和填充作用导致其耐磨性和耐腐蚀性的提高。归因于电化学阻抗谱支持的更紧密的内层和外层膜的形成。衰减全反射傅里叶变换红外光谱（ATR-FTIR）和X射线光电子光谱（XPS）结果表明，APS通过吸附、自缩合和/或化学键存在于陶瓷薄膜的表面和缺陷中(Ti-O-Si) 作为各种状态，因此它们的存在和填充作用导致其耐磨性和耐腐蚀性的提高。归因于电化学阻抗谱支持的更紧密的内层和外层膜的形成。衰减全反射傅里叶变换红外光谱（ATR-FTIR）和X射线光电子光谱（XPS）结果表明，APS通过吸附、自缩合和/或化学键存在于陶瓷薄膜的表面和缺陷中(Ti-O-Si) 作为各种状态，因此它们的存在和填充作用导致其耐磨性和耐腐蚀性的提高。