In situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors,Nanoscale Advances

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In situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-03-17 , DOI: 10.1039/d0na00022a
You Wu _{1,

2,

3,

4,

5} , Xiaojuan Sun _{1,

2,

3,

4,

5} , Zhiming Shi _{1,

2,

3,

4,

5} , Yuping Jia _{1,

2,

3,

4,

5} , Ke Jiang _{1,

2,

3,

4,

5} , Jianwei Ben _{5,

6,

7,

8} , Cuihong Kai _{1,

2,

3,

4,

5} , Yong Wang _{1,

2,

3,

4,

5} , Wei Lü _{1,

2,

3,

4,

5} , Dabing Li _{1,

2,

3,

4,

5}

Affiliation

Al nanoparticles (NPs) have been proven to be the efficient choice for plasmon enhanced AlGaN-based ultraviolet (UV) photodetectors. Previous studies have mainly been focused on the ex situ preparation of Al NPs, but the in situ growth of Al NPs is more desired. In this work, we predict the feasibility for in situ growth of Al surface plasmon NPs on AlGaN-based UV photodetectors by first-principles calculations, and realized it experimentally by metal–organic chemical vapor deposition. For metal–semiconductor–metal type AlGaN-based photodetectors with in situ grown Al surface plasmons, the peak of responsivity was at 288 nm, enhanced 9 times more than that without Al NPs at 10 V bias. The in situ growth method of Al NPs in the present work provides an efficient method for improving the performance of AlGaN-based UV photoelectric devices.

中文翻译：

通过金属有机化学气相沉积原位制备Al表面等离激元纳米粒子，以增强AlGaN深紫外探测器的性能

铝纳米颗粒（NPs）已被证明是等离激元增强的基于AlGaN的紫外线（UV）光电探测器的有效选择。先前的研究主要集中在Al NPs的非原位制备上，但是更期望Al NPs的原位生长。在这项工作中，我们通过第一性原理计算预测了在AlGaN基紫外光电探测器上原位生长Al表面等离子体激元NP的可行性，并通过金属有机化学气相沉积实验实现了这一点。对于具有原位生长的Al表面等离激元的金属-半导体-金属型基于AlGaN的光电探测器，其响应峰在288 nm处，比在10 V偏压下没有Al NP时的响应峰提高了9倍。在原位本发明中Al NPs的生长方法提供了一种有效的方法来改善基于AlGaN的UV光电器件的性能。

更新日期：2020-03-17

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