This paper presents the feasibility of non-stoichiometric TiO_x thin films as an active material for bolometer application. The TiO_x films have been deposited on glass substrate by DC sputtering with oxygen flow rate of 0.1–0.7 sccm at room temperature and their electrical properties have been studied. The TiO_x films were found to be amorphous with dense and smooth surface morphology. The thickness of the films was found to decrease from 150 to 30 nm with an increase in oxygen flow rate. The TiO_x film corresponding to 0.7 sccm showed maximum temperature coefficient of resistivity of 0.72%/°C. Performance of TiO_x-based bolometer pixel (pitch: 56 μm) is simulated using the electrical characteristics of the deposited films. The TiO_x film corresponding to the 0.7 sccm O₂ flow rate displayed thermal conductance of 2.95 × 10^–7 W/K along with a maximum Figure of Merit of 2.45 × 10⁶ and a time constant of 8.2 ms. The Noise equivalent temperature difference of the bolometer structure is estimated (~ 107 mK).

本文介绍了非化学计量的TiO _x薄膜作为辐射热计应用活性材料的可行性。室温下，通过直流溅射以0.1–0.7 sccm的氧气流量将TiO _x膜沉积在玻璃基板上，并对其电性能进行了研究。发现TiO _x膜是无定形的，具有致密且光滑的表面形态。发现膜的厚度随着氧气流速的增加从150nm降低到30nm。对应于0.7sccm的TiO _x膜显示出最大电阻率温度系数为0.72％/℃。TiO _x的性能使用沉积膜的电特性模拟基于热辐射的辐射热计像素（间距：56μm）。对应于0.7 sccm O ₂流量的TiO _x薄膜显示出2.95×10 ^–7  W / K的热导率，最大品质因数为2.45×10 ⁶，时间常数为8.2 ms。估计辐射热计结构的噪声等效温差（〜107 mK）。