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One-step carbonization of poly(styrene/divinylbenzene) to fabricate N-doped porous carbon for high-performance supercapacitor electrode
Journal of Porous Materials ( IF 2.5 ) Pub Date : 2020-03-11 , DOI: 10.1007/s10934-020-00874-4
Ni Wang , Yao Yao , Lixiang He , Yunjian Chen , Baolong Sun

Abstract

A one-step carbonization strategy without KOH activation has been developed to fabricate N-doped porous carbon with a large specific surface area of 1520 m2 g−1, a relatively high nitrogen content of 6.13 wt%, abundant active sites, partial graphitization, and high conductivity. This exploration is based on poly(styrene/divinylbenzene) (p(St/DVB) foam prepared by high internal phase emulsion (HIPE) and with the loading of urea as the nitrogen source. The carbonization process was subsequently carried out at 800 °C to achieve the synthesis of N-doped porous carbon. The electrochemical properties of N-doped porous carbon were evaluated in 0.5 M H2SO4 and 1 M KOH aqueous electrolytes, respectively. In acidic medium, the obtained sample exhibits a high specific capacitance of 276 F g−1 at 1 A g−1 in the potential range of 0–1 V and 70.2% capacitance retention at 20 A g−1. Quite high stability with only 2.2% capacitance loss is confirmed through a 10,000-GCD-cycle at 10 A g−1. In contrast, in a base electrolyte, the N-doped porous carbon also shows excellent energy storage performance with a specific capacitance of 268 F g−1 at 1 A g−1 in the potential range of – 1 to 0 V along with capacitance retention of 67.2% at 20 A g−1. After 10,000 cycles tested at 10 A g–1, our sample still maintains 94.4% retention of initial capacitance. It is convinced that the microstructures result in excellent electrochemical performance.



中文翻译:

一步一步碳化聚苯乙烯/二乙烯基苯以制备用于高性能超级电容器电极的N掺杂多孔碳

摘要

已经开发出一种没有KOH活化的一步碳化方法,以制备N掺杂的多孔碳,其比表面积为1520 m 2  g -1,氮含量相对较高,为6.13 wt%,活性位点丰富,部分石墨化,和高导电性。该探索基于高内相乳液(HIPE)制备的聚苯乙烯/二乙烯基苯泡沫(p(St / DVB)泡沫,并以尿素作为氮源,随后在800°C下进行碳化过程为实现N掺杂多孔碳的合成,在0.5 MH 2 SO 4下评价了N掺杂多孔碳的电化学性能。和1 M KOH水性电解质。在酸性介质中,所获得的样品在0 A至1 V的电位范围内,在1 A g -1下显示出276 F g -1的高比电容,在20 A g -1下的电容保持率为70.2%。通过在10 A g -1下的10,000-GCD循环,可以确认仅具有2.2%的电容损失,就具有很高的稳定性。相比之下,在基础电解质中,N掺杂的多孔碳还显示出出色的能量存储性能,在1 A g -1下在– 1至0 V的电位范围内的比电容为268 F g -1在20 A g -1时为67.2%。10,000次循环后,以10 A g –1进行测试,我们的样品仍保持94.4%的初始电容保持率。可以肯定的是,微观结构导致了优异的电化学性能。

更新日期:2020-03-12
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