Cr2FeSi and CrMn2Si Heusler compound films were experimentally prepared on Si (100) substrate by alternating evaporation method with post-annealing process. The samples have a cubic structure with a space group of Pm3n (223), and the crystallinity is dependent on the Fe (Mn) contents. The exchange bias effect in the bilayer samples confirmed the AFM state of the CrMn1.95Si and Cr1.92FeSi. Analysis of magnetic and transport properties revealed that both Cr2FeSi and CrMn2Si Heusler compound films are highly conductive antiferromagnetic semiconductor with band gap of 0.4–0.5 eV and might have broad half-metallic temperature region. These features suggest that CrMn2Si and Cr2FeSi films could be good candidates in an application of antiferromagnetic spintronics in commercial semiconductor industry, in view of the good structural compatibility between Heusler compound and the mainstream zinc-blende structured semiconductor substrate.

中文翻译：

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Cr2FeSi 和 CrMn2Si Heusler 复合薄膜的半导体反铁磁体

Cr2FeSi 和 CrMn2Si Heusler 复合薄膜通过交替蒸发法和后退火工艺在 Si(100) 衬底上实验制备。样品具有立方结构，空间群为 Pm3n (223)，结晶度取决于 Fe (Mn) 含量。双层样品中的交换偏置效应证实了 CrMn1.95Si 和 Cr1.92FeSi 的 AFM 状态。磁性和传输特性分析表明，Cr2FeSi 和 CrMn2Si Heusler 复合薄膜都是高导电的反铁磁半导体，带隙为 0.4-0.5 eV，可能具有较宽的半金属温度范围。这些特征表明 CrMn2Si 和 Cr2FeSi 薄膜可能是商业半导体工业中反铁磁自旋电子学应用的良好候选材料，