Abstract To explore a new color-adjustable self-emitting in SrGa2Ge2O8:Eu phosphors, a series of experiments and characterization were carried out in this paper. Through a classic solid state method, we successfully synthesized the SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≦ 0.2) phosphors. The resulting SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≦ 0.2) phosphors had been structurally characterized by X-ray Powder Diffraction Refinements (XRD) and Energy Disperse Spectrometer (EDS). In the present study, it was found that under the excitation of 277 nm, by changing the concentration of doped europium ions, a series of color changes from cyan to white are obtained in SrGa2Ge2O8. The energy transfer from the host to the Eu ions occurs. And the energy transfer ability from the host to Eu3+ were shown to be induced when aluminum was substituted to the nominal composition. The bond energy calculation result shows that the doped Sr2+, Ga3+, Ge4+ ions are substituted by Eu3+, Al3+ and Si4+, respectively, which is consistent with the XRD Rietveld refinement analysis. Also, the EDS analysis shows that atomic ratio is 10:19:20 for Sr/Ga/Ge in SrGa2Ge2O8, which is consistent with the XRD result. Diffuse reflection (DR) spectra and electronic structure display the energy band gap is 4.49 and 3.487eV, respectively. Excited by the 260 nm light, it presents a broad band peaks from 350 to 650 nm with the peak at 441 nm. When Al3+/Si4+ ions are doped in it, the red-shift of the matrix and the photoluminescence improvement of SrGa2Ge2O8: Eu can be found.

中文翻译：

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Eu3+取代SrGa2Ge2O8中一种新的颜色可调自发光、能量转移和发光中心的确定

摘要 为了在SrGa2Ge2O8:Eu 荧光粉中探索一种新的颜色可调自发光，本文进行了一系列的实验和表征。通过经典的固态方法，我们成功合成了 SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≤ 0.2) 荧光粉。所得的 SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≤ 0.2) 磷光体已通过 X 射线粉末衍射细化 (XRD) 和能量色散光谱仪 (EDS) 进行结构表征。本研究发现，在 277 nm 激发下，通过改变掺杂铕离子浓度，SrGa2Ge2O8 得到了从青色到白色的一系列颜色变化。发生从宿主到 Eu 离子的能量转移。当铝被替换为标称成分时，显示出从主体到 Eu3+ 的能量转移能力。键能计算结果表明，掺杂的Sr2+、Ga3+、Ge4+离子分别被Eu3+、Al3+和Si4+取代，这与XRD Rietveld精修分析一致。此外，EDS 分析表明 SrGa2Ge2O8 中 Sr/Ga/Ge 的原子比为 10:19:20，这与 XRD 结果一致。漫反射 (DR) 光谱和电子结构显示能带隙分别为 4.49 和 3.487eV。在 260 nm 光的激发下，它在 350 到 650 nm 之间呈现宽带峰，峰值在 441 nm。当在其中掺杂Al3+/Si4+离子时，可以发现基体的红移和SrGa2Ge2O8:Eu的光致发光改善。这与 XRD Rietveld 精修分析一致。此外，EDS 分析表明 SrGa2Ge2O8 中 Sr/Ga/Ge 的原子比为 10:19:20，这与 XRD 结果一致。漫反射 (DR) 光谱和电子结构显示能带隙分别为 4.49 和 3.487eV。在 260 nm 光的激发下，它在 350 到 650 nm 之间呈现宽带峰，峰值在 441 nm。当在其中掺杂Al3+/Si4+离子时，可以发现基体的红移和SrGa2Ge2O8:Eu的光致发光改善。这与 XRD Rietveld 精修分析一致。此外，EDS 分析表明 SrGa2Ge2O8 中 Sr/Ga/Ge 的原子比为 10:19:20，这与 XRD 结果一致。漫反射 (DR) 光谱和电子结构显示能带隙分别为 4.49 和 3.487eV。在 260 nm 光的激发下，它在 350 到 650 nm 之间呈现宽带峰，峰值在 441 nm。当在其中掺杂Al3+/Si4+离子时，可以发现基体的红移和SrGa2Ge2O8:Eu的光致发光改善。它在 350 到 650 nm 范围内呈现宽带峰，峰值在 441 nm。当在其中掺杂Al3+/Si4+离子时，可以发现基体的红移和SrGa2Ge2O8:Eu的光致发光改善。它在 350 到 650 nm 范围内呈现宽带峰，峰值在 441 nm。当在其中掺杂Al3+/Si4+离子时，可以发现基体的红移和SrGa2Ge2O8:Eu的光致发光改善。