A new color-adjustable self-emitting in SrGa2Ge2O8 substituted by Eu3+, energy transfer and the determination of luminescence center

https://doi.org/10.1016/j.jlumin.2020.117194Get rights and content

Highlights

  • The luminescence characteristics and crystal structure of Eu in SrGa2Ge2O8 matrix.

  • The dual-excitation emission can be achieved.

  • The lattice occupancy and energy transfer was studied.

Abstract

To explore a new color-adjustable self-emitting in SrGa2Ge2O8:Eu phosphors, a series of experiments and characterization were carried out in this paper. Through a classic solid state method, we successfully synthesized the SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≦ 0.2) phosphors. The resulting SrGa2-yGe2-zO8:xEu (0 ≤ x, y, z ≦ 0.2) phosphors had been structurally characterized by X-ray Powder Diffraction Refinements (XRD) and Energy Disperse Spectrometer (EDS). In the present study, it was found that under the excitation of 277 nm, by changing the concentration of doped europium ions, a series of color changes from cyan to white are obtained in SrGa2Ge2O8. The energy transfer from the host to the Eu ions occurs. And the energy transfer ability from the host to Eu3+ were shown to be induced when aluminum was substituted to the nominal composition. The bond energy calculation result shows that the doped Sr2+, Ga3+, Ge4+ ions are substituted by Eu3+, Al3+ and Si4+, respectively, which is consistent with the XRD Rietveld refinement analysis. Also, the EDS analysis shows that atomic ratio is 10:19:20 for Sr/Ga/Ge in SrGa2Ge2O8, which is consistent with the XRD result. Diffuse reflection (DR) spectra and electronic structure display the energy band gap is 4.49 and 3.487eV, respectively. Excited by the 260 nm light, it presents a broad band peaks from 350 to 650 nm with the peak at 441 nm. When Al3+/Si4+ ions are doped in it, the red-shift of the matrix and the photoluminescence improvement of SrGa2Ge2O8: Eu can be found.

Introduction

The 4f orbital of rare earth ions provides very rich electron transition energy levels, so its luminescence range is extremely wide. And its physical properties are exceedingly stable, therefore rare earth ions interact with the matrix as activators will get many interesting phenomena [[1], [2], [3], [4], [5], [6], [7]]. For europium ions, the stability of trivalent europium ion is better than that of divalent europium ion [[8], [9], [10], [11], [12]]. The f-f transition of Eu3+ comes from a narrow peak of about 612 nm [[13], [14], [15], [16], [17]]. Recent studies have identified Eu3+ doped AB2C2O8(including SrAl2Si2O8, SrGa2Ge2O8) host has good fluorescence properties, including a strong excitation emission, thermal stability, color adjustment, etc. [[18], [19], [20], [21], [22], [23]] In SrAl2Si2O8 system, all Sr, Al and Si atoms occupy 8f lattice. Sr atoms were surrounded by seven oxygen atoms, forming a SrO7 polyhedron. Four oxygen atoms surround the Al and Si atoms and form (Al/Si)O4 tetrahedron. And in SrGa2Ge2O8 crystal structure, Al and Si can be considered to be replaced by Ga and Ge, respectively [24,25].The crystal structure of SrGa2Ge2O8 has the similarly crystal structure as SrAl2Si2O8. However, the photoluminescence of Eu3+ doped or undoped SrGa2Ge2O8 phosphor has not been reported as a potential phosphor.

Our work is to synthesize a series of Eu3+ doped or undoped SrGa2Ge2O8 phosphors. The photoluminescence properties of Eu3+ doped or undoped SrGa2Ge2O8 phosphor are investigated. An ultra-wide broadband emission from the violet to the orange region is found in SrGa2Ge2O8 phosphor. After doping Eu3+, white light emission can be achieved by combining a broad blue-green band at 441 nm and some red emission bands at about 618 nm. In addition, we first performed first-principles display density-functional-theory to understand the origins of the broadband emission of SrGa2Ge2O8 phosphor. It is proved by the analysis of experimental data that the photoluminescence properties of Si4+ no Al3+ substituted SrGa2Ge2O8 phosphor also are detected to analyze the luminescent origin of the SrGa2Ge2O8 phosphor. And the bond valence model (BVM) has been used to evaluate the bond energy calculation, which can help us to judge the dopant preferential occupies.

Section snippets

Materials synthesis

A series of SrGa2Ge2O8:xEu3+ (x = 0, 1%, 2%, 3%, 5%, 7% and 10%), SrGa2-yAlyGe2O8:1%Eu3+ and SrGa2Ge2-ySiyO8:1%Eu (y = 5%, 10%, 15% and 20%) phosphors were synthesized by high-temperature solid-state reactions. The stoichiometry amounts of SrCO3 (99.99%), Ga2O3 (99.99%), Al2O3 (99.99%), GeO2 (99.99%), SiO2 (99.99%), Eu2O3 (99.99%) were mixed in an agate mortar. The mixture is completely ground and transferred to an alumina crucible. It was sintered at 1200 °C for 4 h. After cooling the sample

Phase and electronic structure

Fig. 1 (a), (c), (e) illustrate the purity of the prepared SrGa2-yGe2-zO8:xEu3+(x = 0, 1%, 2%, 3%, 5%, 7% and 10%, y = 0, z = 0), SrGa2-yAlyGe2O8:1%Eu (y = 0.05, 0.10, 0.15 and 0.20) and SrGa2Ge2-zSizO8:1%Eu (z = 0.05, 0.10, 0.15, 0.20) by XRD patterns, respectively. From the standard cards of SrGa2Ge2O8 (JCPDS#27–1437), it can see that all peaks correspond to the standard cards one by one. This indicates that all of the samples are pure phases and there is no impurity phase in the Eu-doped SrGa

Conclusion

A series of SrGa2Ge2O8:xEu3+ (x = 0, 1%, 2%, 3%, 5%, 7% and 10%), SrGa2-yAlyGe2O8:1%Eu3+ and SrGa2Ge2-zSizO8:1%Eu (y, z = 0.05, 0.10, 0.15 and 0.20) phosphors were synthesized by high-temperature solid-state reactions. The XRD patterns indicate that they are pure phase, and the XRD Rietveld refinement analysis shows that the Sr2+ is occupied by Eu3+ and Al3+, Si4+ replace the sites of the Ga3+, Ge4+ ions, respectively, which is consistent with the bond energy calculation result. Also, the EDS

Author statement

The paper is original, not being or having been submitted for publication to other journals and the all authors read the paper and agree with its submission to Journal of Luminescence.

Declaration of competing interest

There are no conflicts to declare.

The authors declared that they have no conflicts of interest to this work. We declare that we do not have any commercial or associative interest that represents a conflict of interest in connection with the work submitted.

Acknowledgements

This work is financially supported by the National Natural Science Foundations of China (Grant no. 21301053), Hubei Natural Science Foundations from Science and Technology Department of Hubei Province (2018CFB517). The study was supported by Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, Hubei University, Wuhan, 430062, PR China.

References (33)

  • L. Li et al.

    Bond energy, preferential occupancy and spontaneous reduction ability of Eu3+ doped in CaAl2Si2O8

    J. Alloys Compd.

    (2018)
  • Y. Pan et al.

    F-Eu3+ charge transfer energy and local crystal environment in Eu3+ doped calcium fluoride

    Ceram. Int.

    (2017)
  • L. Wang et al.

    Photoluminescent properties and site occupation preference in Bi3+, Eu3+ doped CaY4(SiO4)3O phosphor

    Ceram. Int.

    (2016)
  • Chen Lei; Cheng Peng; Zhang Zhao; Reduced local symmetry in lithium compound Li2SrSiO4 distinguished by an Eu3+...
  • Q. Bai et al.

    Zn2-aGeO4:RE and Zn2Ge1-aO4:RE (RE = Ce3+, Eu3+, Tb3+, Dy3+): 4f-4f and 5d-4f transition luminescence of rare earth ions under different substitution

    RSC Adv.

    (2016)
  • J.I. Pacold et al.

    Direct observation of 4f intrashell excitation in luminescent Eu complexes by time-resolved X-ray absorption near edge spectroscopy

    J. Am. Chem. Soc.

    (2014)
  • Cited by (2)

    • Novel white-emitting afterglow phosphor Na<inf>2</inf>CaSn<inf>2</inf>Ge<inf>3</inf>O<inf>12</inf>:Dy<sup>3+</sup>: Preparation, photoluminescence, and phosphorescence properties

      2021, Journal of Alloys and Compounds
      Citation Excerpt :

      The afterglow luminescence of long persistent phosphorescence (LPP) phosphors is caused by exciton carriers (electrons, roles and their complexes), which escape from the defects under thermal stimulation to recombine and transfer the released carrier to the activation center [1–3].

    1

    The co-first authors.

    View full text