Abstract Memory devices were prepared by spin-coating process, and the multistage resistive switching behavior has been found in organic coating films-based of memory device. The composite of [ 6 , 6 ]-phenyl C61-butyric acid methyl ester and polyvinyl pyrrolidone were used as active layer materials. The as-prepared device exhibits a typical nonvolatile write-once-read-many- times storage effect, and shows multistate resistive switching behavior, and there are obvious distinctions between different resistance states. The resistance in low resistance state (LRS) and high resistance state (HRS) dependence on temperature is tested, and the resistance of LRS and HRS show metal and semiconductor characteristics, respectively. As well as, the resistance in HRS shows evident dependence on cell size. Hence, the resistive switching mechanism was attributed to the broken processes of carbon-rich conducting filament. Furthermore, conductance quantization during resistive switching processes was analyzed. This work might make it attractive for exploiting high density data storage.

中文翻译：

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基于多级电阻开关行为的存储器件有机涂层

摘要 采用旋涂工艺制备了存储器件，并在基于有机涂层的存储器件中发现了多级电阻开关行为。以[ 6 , 6 ]-苯基C61-丁酸甲酯与聚乙烯吡咯烷酮的复合物作为活性层材料。所制备的器件表现出典型的非易失性一次写入多次读取存储效应，并表现出多态电阻开关行为，并且不同电阻状态之间存在明显区别。测试了低阻态 (LRS) 和高阻态 (HRS) 的电阻对温度的依赖性，LRS 和 HRS 的电阻分别显示金属和半导体特性。此外，HRS 中的电阻显示出对细胞大小的明显依赖性。因此，电阻转换机制归因于富碳导电丝的断裂过程。此外，还分析了电阻开关过程中的电导量化。这项工作可能会使其对开发高密度数据存储具有吸引力。