Multistage resistive switching behavior organic coating films-based of memory devices
Introduction
Memory devices based on the resistive switching behavior have drawn a lot of attentions in the fields of computing applications [[1], [2], [3], [4], [5], [6], [7], [8], [9]], mainly is under consideration that it can substitute conventional flash memory and dynamic random access memory, due to this memory type makes a feature of fast switching speeds, forceful endurance and long retention [10,11]. The resistive switching behaviors have been reported in sandwich construction with a variety of materials, including inorganic materials [[12], [13], [14], [15], [16], [17], [18], [19], [20], [21], [22]] and organic materials [23]. In view of the wonderful resistive switching characteristics took on by some organic materials, organic devices are be identified as one of the best candidates for future nonvolatile memory technique [Error! Bookmark not defined.]. Organic memory device is on the strength of low cost polymer films fabricated by simple solution processing through spin coating or dip coating technology [24]. The preparation procedure is a simple crossbar construction, which is free from the need to use transistors [Error! Bookmark not defined.]. Among the emerging memories, resistance random access memory (RRAM) is regarded as to be a potential candidate for future memory devices on account of its excellent scalability and favourable compatibility with integrated IC technology [Error! Bookmark not defined.]. For the past few years, many scholars began to have a strong interest in research the multistate resistive switching RRAM devices and their complicated resistive switching process. These open up novelty application field mainly on synaptic emulation for neuromorphic computing to link electronics with human brain functions [25].
Multistate resistive switching provides a fresh opportunity to memory more than 2 bits in a single cell, as a consequence, could achieve high density data srorage with minimum downscaling. As a result, investigation devoted to the possibility of achieving multistate resistive switching memory has sparked immense interest. On the other hand, polyvinyl pyrrolidone (PVP), due to its excellent physical, biological and mechanical properties, has attracted more and more attention due to a desire to develop materials for applications in polymer-based memory devices [[26], [27], [28]]. Furthermore [6,6],-phenyl C61-butyric acid methyl ester (PCBM) containing hybrid films were widely used as the active layer in memory devices due to its good solubility and high electron mobility [29].
Multistate data storage could store more than two bits in a cell; this characteristic could be developed to availably improve the density of data storage [30]. Howerve, the multistate resistive switching has been reported in many oxide materials, there are only few literatures reporting multistate resistive switching with organic materials [31]. In this work, a multistage resistive switching process based on organic coating films was demonstrated, it presents a representative nonvolatile write-once-read-many-times (WORM) memory effect, and makes character of multistate data storage, long retention time (1 × 105 s), and great potential in high density archive data storage.
Section snippets
Experimental details
Glass substrates were obtained from Luoyang guluo glass co., LTD. Both PCBM and PVP were purchased from sigma-aldrich. Glass substrates were ultrasonic subsequently cleaned in acetone, methyl alcohol, and deionized water with a period of 30 min, respectively. The composites of PCBM and PVP (mass ratio of 4:5) were dissolved in mixed solvents of 1:1 (volume ratio) dichlorobenzene and ethanol with the concentration of solution was 20 mg/ml. The composite solutions were spin coated on glass
Result and discussion
Fig. 1(a) exhibits the applied organic semiconductor materials of PCBM and PVP in this work. Fig. 1(b) depicts the crossbar array architecture. The cross-sectional scanning electron microscopy (SEM) graph before the top electrode was deposited also exhibits the device structure and the 145 nm thick composite active layer as shown in Fig. 1(c).
Fig. 2(a) exhibits the I-V curves of the device. It can be seen from the I-V curves that the initial state of the device is low resistance state (LRS).
Conclusion
In conclusion, sandwich structure memory devices were prepared by spin-coating process with the composite active layer composed of PCBM and PVP. The Al/PCBM + PVP/Al devices feature multistate resistive switching behavior, nonvolatile write-once- read-many-times (WORM) storage effect, long retention time (1 × 105 s), and quantized conductance phenomena. The resistive switching mechanism was analyzed based on the temperature dependence of resistance in LRS and HRS of the device and electrode
CRediT authorship contribution statement
Yanmei Sun: Conceptualization, Data curation, Visualization, Writing - original draft, Funding acquisition. Dianzhong Wen: Supervision, Project administration.
Acknowledgements
Funding received from, Natural Science Foundation of Heilongjiang Province, China (LH2019F029) and the Basic Research Project of the Basic Research Business of the Provincial University in Heilongjiang Province (RCCX201702).
References (49)
Resistive switching in transition metal oxides
Mater. Today
(2008)- et al.
Capacitive effect: an original of the resistive switching memory
Nano Energy
(2020) - et al.
Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device
Nano Energy
(2019) - et al.
Resistive switching in reduced graphene oxide incorporated polyvinyl alcohol films
Mater. Today Proc.
(2019) - et al.
Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: graphene quantum-dot nanocomposites
Org. Electron.
(2017) - et al.
Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites
Org. Electron.
(2016) - et al.
Bipolar resistive switching and nonvolatile memory effect in poly (3-hexylthiophene) ecarbon nanotube composite films
Carbon
(2018) - et al.
A unified capacitive-coupled memristive model for the nonpinched current voltage hysteresis loop
Nano Lett.
(2019) - et al.
Redox-based resistive switching memories- nanoionic mechanisms, prospects, and challenges
Adv. Mater.
(2009) - et al.
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
Nano Lett.
(2009)
Mechanistic analysis of oxygen vacancy-driven conductive filament formation in resistive random access memory metal/NiO/metal structures
ACS Appl. Mater. Interfaces
Nanoionics-enabled memristive devices: strategies and materials for neuromorphic applications
Adv. Electron. Mater.
Nanoionics-based resistive switching memories
Nat. Mater.
Evolution map of the memristor: from pure capacitive state to resistive switching state
Nanoscale
Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality
Mater. Horiz.
Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
J. Appl. Phys.
Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate
ACS Appl. Mater. Interfaces
Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface
Appl. Phys. Lett.
Memristive switching mechanism for metal/oxide/metal nanodevices
Nat. Nanotechnol.
Structural and chemical characterization of TiO2 memristive devices by spatially- resolved NEXAFS
Nanotechnology
Electrode dependence of resistive switching in Mn-doped ZnO: filamentary versus interfacial mechanisms
Appl. Phys. Lett.
Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate
ACS Appl. Mater. Interfaces
Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films
Adv. Mater.
Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices
Adv. Mater.
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