This study demonstrates the fabrication of thermoresponsive poly(N-isopropylacrylamide) (PNIPAAm) thin films using the initiated PECVD (i-PECVD) method, in which the initiator tert-butyl peroxide was used together with the monomer NIPAAm. The deposition rates, wettability properties, and the low critical solution temperature (LCST) of i-PECVD deposited PNIPAAM were compared with those of classical continuous wave and pulsed PECVD techniques without TBPO. The effect of plasma power, plasma operation mode, substrate temperature and the presence of initiator on the deposition rate and wettability properties of PNIPAAm thin films were investigated. The results showed that it was possible to tune the deposition rate and wettability properties of PNIPAAm thin films by changing the PECVD parameters. The highest deposition rate (47.9 nm/min) and the largest contact angle difference (18.3°) depending on the temperature were obtained using the i-PECVD method. The LCST value of i-PECVD-PNIPAAm was able to be tuned between 31 and 34 °C. Such value was dependent on the presence and amount of the initiator. On the basis of these results, the i-PECVD method can be considered as the most proper approach for producing of PNIPAAm with desired properties.

中文翻译：

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通过引发等离子体增强化学气相沉积制备具有更高沉积速率和更容易相变的聚（N-异丙基丙烯酰胺）

本研究展示了使用引发的 PECVD (i-PECVD) 方法制造热响应性聚 (N-异丙基丙烯酰胺) (PNIPAAm) 薄膜，其中引发剂叔丁基过氧化物与单体 NIPAAm 一起使用。将 i-PECVD 沉积的 PNIPAAM 的沉积速率、润湿性和低临界溶解温度 (LCST) 与没有 TBPO 的经典连续波和脉冲 PECVD 技术进行了比较。研究了等离子体功率、等离子体操作模式、衬底温度和引发剂的存在对PNIPAAm薄膜沉积速率和润湿性的影响。结果表明，可以通过改变 PECVD 参数来调整 PNIPAAm 薄膜的沉积速率和润湿性。最高沉积率 (47. 9 nm/min) 和最大接触角差异 (18.3°) 取决于温度是使用 i-PECVD 方法获得的。i-PECVD-PNIPAAm 的 LCST 值能够在 31 到 34 °C 之间进行调整。该值取决于引发剂的存在和量。基于这些结果，i-PECVD 方法可以被认为是生产具有所需特性的 PNIPAAm 的最合适的方法。