Oxidation of HF vapor-etched nanocrystalline silicon films, prepared by drop coating from nanocrystalline Si sol in acetonitrile, was studied. Oxidation of nanocrystalline silicon at room temperature in air with 5% and 86% relative humidity was observed by means of infrared spectroscopy for 2 days. The change in film mass after 15 h of oxidation was determined using quartz crystal microbalance. In dry air, film mass and integral intensity of bands attributed to vibrations in Si_3 − x–Si–H_x and Si–O–Si groups changed linearly with time. In humid air, intensity of in Si_3 − x–Si–H_x band decays exponentially and intensity of Si–O–Si band increases as a square root of oxidation time. Film mass gain after 15 h of oxidation corresponds to an average oxide layer thickness of 0.02 nm in dry air and 0.51 nm in wet air.

研究了由纳米晶硅溶胶在乙腈中滴涂法制备的HF气相蚀刻纳米晶硅膜的氧化过程。通过红外光谱观察了室温下在5％和86％相对湿度的空气中纳米晶硅的氧化2天。使用石英晶体微量天平测定氧化15小时后的膜质量变化。在干燥的空气中，归因于Si _{3 −  x} –Si–H _x和Si–O–Si组的振动的薄膜质量和能带的整体强度随时间线性变化。在潮湿的空气中，Si _{3 −  x} –Si–H _x的强度随着氧化时间平方根的增加，Si-O-Si带的强度呈指数衰减，Si-O-Si带的强度增加。氧化15小时后的薄膜质量增加对应于干燥空气中0.02 nm和潮湿空气中0.51 nm的平均氧化物层厚度。