A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH.

中文翻译：

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使用CMOS技术的微湿度传感器系统的制造和传感特性

微湿度传感器系统是通过0.8μm模拟混合CMOS技术设计和制造的。集成传感器系统分别由n通道差分FET湿度传感器，惠斯通电桥湿度传感器和运算放大器模块组成。差分传感器采用氮化碳膜作为新的传感材料，并具有一对晶体管，一个传感晶体管和一个非传感晶体管（参考晶体管），以消除意外的影响。当相对湿度从10％RH增加到70％RH时，FET湿度传感器的漏极电流从0.88 mA增加到0.99 mA。