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Fabrication and sensing properties of a micro-humidity sensor system using CMOS technology

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Abstract

A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH.

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Authors and Affiliations

  1. Department of Electronic Engineering, Kyungnam University, 631-701, Masan, Korea

    Sung Pil Lee

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  1. Sung Pil Lee
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Correspondence to Sung Pil Lee.

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Lee, S.P. Fabrication and sensing properties of a micro-humidity sensor system using CMOS technology. Electron. Mater. Lett. 6, 7–12 (2010). https://doi.org/10.3365/eml.2010.03.007

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