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Dry etching of germanium using inductively coupled Ar/CCl2F2/Cl2 plasma
Electronic Materials Letters ( IF 2.1 ) Pub Date : 2010 , DOI: 10.3365/eml.2010.03.035
Taek Sung Kim , Sang-Sik Choi , Mi Im Shin , Tae Soo Jeong , Sukil Kang , Chel-Jong Choi , Kyu-Hwan Shim

In this study, the etch characteristics of Ge are investigated using inductively coupled Ar/CCl2F2/Cl2 plasmas. The etch rate, surface morphology and subtended angle obtained with different etching conditions are presented. The etch rate of Ge increases from 374 Å/min to 520 Å/min as the ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 Å/min to 400 Å/min as CCl2F2 flow increases from 40 sccm to 80 sccm. In addition, the etching rate of Ge decreases from 467 Å/min to 400 Å/min as the Cl2 flow increases from 0 sccm to 20 sccm. As the ICP power increases the subtended angle also increases. According to SEM imagery Ar/CCl2F2/Cl2ICP etching leads to the presence of carbon-based material in the form of large particles.



中文翻译:

使用感应耦合的Ar / CCl干蚀刻锗2F2/氯2 等离子体

在这项研究中,使用感应耦合的Ar / CCl 2 F 2 / Cl 2等离子体研究了Ge的蚀刻特性。给出了不同刻蚀条件下的刻蚀速率,表面形貌和对角。当ICP功率从400 W增加到700 W时,Ge的蚀刻速率从374Å/ min增加到520Å/ min,而随着CCl 2 F 2的流动,Ge的蚀刻速率从524Å/ min减小到400Å/ min从40 sccm增加到80 sccm。另外,随着Cl 2流量从0 sccm增加到20 sccm ,Ge的蚀刻速率从467Å/ min降低到400Å/ min 。随着ICP功率的增加,对角也会增加。根据SEM图像Ar / CCl 2F 2 / Cl 2 ICP蚀刻导致大颗粒形式的碳基材料的存在。

更新日期:2020-03-03
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