In this study, the etch characteristics of Ge are investigated using inductively coupled Ar/CCl₂F₂/Cl₂ plasmas. The etch rate, surface morphology and subtended angle obtained with different etching conditions are presented. The etch rate of Ge increases from 374 Å/min to 520 Å/min as the ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 Å/min to 400 Å/min as CCl₂F₂ flow increases from 40 sccm to 80 sccm. In addition, the etching rate of Ge decreases from 467 Å/min to 400 Å/min as the Cl₂ flow increases from 0 sccm to 20 sccm. As the ICP power increases the subtended angle also increases. According to SEM imagery Ar/CCl₂F₂/Cl₂ICP etching leads to the presence of carbon-based material in the form of large particles.

在这项研究中，使用感应耦合的Ar / CCl ₂ F ₂ / Cl ₂等离子体研究了Ge的蚀刻特性。给出了不同刻蚀条件下的刻蚀速率，表面形貌和对角。当ICP功率从400 W增加到700 W时，Ge的蚀刻速率从374Å/ min增加到520Å/ min，而随着CCl ₂ F _2的流动，Ge的蚀刻速率从524Å/ min减小到400Å/ min从40 sccm增加到80 sccm。另外，随着Cl ₂流量从0 sccm增加到20 sccm ，Ge的蚀刻速率从467Å/ min降低到400Å/ min 。随着ICP功率的增加，对角也会增加。根据SEM图像Ar / CCl ₂F ₂ / Cl ₂ ICP蚀刻导致大颗粒形式的碳基材料的存在。