Abstract
In this study, the etch characteristics of Ge are investigated using inductively coupled Ar/CCl2F2/Cl2 plasmas. The etch rate, surface morphology and subtended angle obtained with different etching conditions are presented. The etch rate of Ge increases from 374 Å/min to 520 Å/min as the ICP power increases from 400 to 700 W, whereas the etching rate of Ge decreases from 524 Å/min to 400 Å/min as CCl2F2 flow increases from 40 sccm to 80 sccm. In addition, the etching rate of Ge decreases from 467 Å/min to 400 Å/min as the Cl2 flow increases from 0 sccm to 20 sccm. As the ICP power increases the subtended angle also increases. According to SEM imagery Ar/CCl2F2/Cl2ICP etching leads to the presence of carbon-based material in the form of large particles.
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Kim, T.S., Choi, SS., Shin, M.I. et al. Dry etching of germanium using inductively coupled Ar/CCl2F2/Cl2 plasma. Electron. Mater. Lett. 6, 35–39 (2010). https://doi.org/10.3365/eml.2010.03.035
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DOI: https://doi.org/10.3365/eml.2010.03.035