In order to determine the reliability of Al-1% Si bonding wires, the microstructure of an annealed wire, including grain morphology and secondary phases, was investigated by conventional transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The grains are extremely long and thin parallel to the drawn direction, and the average grain size is about 600 nm to 700 nm. Nano-sized thin plate-like Si crystals of about 10 nm length and a few monolayers thickness were observed, and their crystallography and morphology are discussed in this paper.

中文翻译：

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Al-1％Si键合丝的微结构演变以提高微电子可靠性

为了确定Al-1％Si键合焊丝的可靠性，通过常规的透射电子显微镜（TEM）和高分辨率电子显微镜（HREM）研究了退火线的微观结构，包括晶粒形态和第二相。晶粒非常长且平行于拉伸方向薄，并且平均晶粒尺寸为约600nm至700nm。观察到了约10 nm长，几层单分子膜厚度的纳米级薄板状Si晶体，并对其晶体学和形貌进行了讨论。