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Microstructure evolution of Al-1% Si bonding wire for microelectronic reliability

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Abstract

In order to determine the reliability of Al-1% Si bonding wires, the microstructure of an annealed wire, including grain morphology and secondary phases, was investigated by conventional transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The grains are extremely long and thin parallel to the drawn direction, and the average grain size is about 600 nm to 700 nm. Nano-sized thin plate-like Si crystals of about 10 nm length and a few monolayers thickness were observed, and their crystallography and morphology are discussed in this paper.

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Authors and Affiliations

  1. Department of Advanced Materials Science and Engineering, Kangwon National University, Chuncheon-si, 200-701, Gangwon, Korea

    Hyung-Giun Kim & Sung-Hwan Lim

  2. R&D Department, Heraeus Oriental HiTec, 587-122, Incheon, Korea

    Dae-Hyung Cho & Eun-Kyun Jeong

  3. Advanced Materials R&D Center, Korea Institute of Industrial Technology, 406-130, Incheon, Korea

    Won-Yong Kim

Authors
  1. Hyung-Giun Kim
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  2. Dae-Hyung Cho
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  3. Eun-Kyun Jeong
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  4. Won-Yong Kim
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  5. Sung-Hwan Lim
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Correspondence to Sung-Hwan Lim.

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Kim, HG., Cho, DH., Jeong, EK. et al. Microstructure evolution of Al-1% Si bonding wire for microelectronic reliability. Electron. Mater. Lett. 5, 99–103 (2009). https://doi.org/10.3365/eml.2009.09.099

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  • DOI: https://doi.org/10.3365/eml.2009.09.099

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