A pin photo-diode was fabricated from the Si_0.2Ge_0.8/Si strained multiple quantum-well (MQW) structure grown by using ultra high vacuum chemical vapor deposition (UHV-CVD). The structural properties of the Si_0.2Ge_0.8/Si strained MQW were investigated using high-resolution X-ray diffraction (HRXRD). Specifically, the recent advances in the dry etching of Si_0.2Ge_0.8Si strained MQW have been used to define pin photo-diode active layer mesas. The current-voltage (I-V) characteristic of pin photodiodes fabricated from these MQWs was measured. Also, the spectral response spectrum of pin photodiodes was measured at room temperature.

通过使用超高真空化学气相沉积（UHV-CVD）生长的Si _0.2 Ge _0.8 / Si应变多量子阱（MQW）结构制造了pin光电二极管。使用高分辨率X射线衍射（HRXRD）研究了Si _0.2 Ge _0.8 / Si应变MQW的结构性能。具体地，Si _0.2 Ge _0.8 Si应变的MQW的干法蚀刻中的最新进展已经用于限定pin光电二极管有源层台面。测量了由这些MQW制成的引脚光电二极管的电流-电压（IV）特性。另外，在室温下测量pin光电二极管的光谱响应光谱。