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Fabrication of PIN photo-diode from Si0.2Ge0.8/Si strained MQWs

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Abstract

A pin photo-diode was fabricated from the Si0.2Ge0.8/Si strained multiple quantum-well (MQW) structure grown by using ultra high vacuum chemical vapor deposition (UHV-CVD). The structural properties of the Si0.2Ge0.8/Si strained MQW were investigated using high-resolution X-ray diffraction (HRXRD). Specifically, the recent advances in the dry etching of Si0.2Ge0.8Si strained MQW have been used to define pin photo-diode active layer mesas. The current-voltage (I-V) characteristic of pin photodiodes fabricated from these MQWs was measured. Also, the spectral response spectrum of pin photodiodes was measured at room temperature.

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Authors and Affiliations

  1. Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of Physics, Chonbuk National University, 561-756, Jeonju-si, Jeonbuk, Korea

    Taek Sung Kim, Sang-Sik Choi, Tae Soo Jeong, Sukil Kang, Chel-Jong Choi & Kyu-Hwan Shim

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  1. Taek Sung Kim
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  2. Sang-Sik Choi
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  3. Tae Soo Jeong
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  5. Chel-Jong Choi
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  6. Kyu-Hwan Shim
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Correspondence to Taek Sung Kim.

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Kim, T.S., Choi, SS., Jeong, T.S. et al. Fabrication of PIN photo-diode from Si0.2Ge0.8/Si strained MQWs. Electron. Mater. Lett. 5, 95–98 (2009). https://doi.org/10.3365/eml.2009.09.095

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