Thin polyvinylidene fluoride-silicon carbide (PVDF-SiC) shielding composite films were prepared by a simple solution casting process. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show the presence of both polymer and filler with no reaction between them. The coefficient of thermal expansion (CTE) and tensile strength of the composite exhibit a decreasing tendency, while that of conductivity and electromagnetic interference (EMI) shielding values increase with filler loading. The ε_r, and tanδ of the composites were also found to increase with filler loading in the frequency range of 8.2–18 GHz, which also influence the shielding behaviour of the composite. The high filler (60 vol.% of SiC) loaded composite of 1 mm thickness exhibits direct current (DC) conductivity of the order of 10⁻⁵ S/m indicating its potential for electrostatic discharge shielding applications. This is further confirmed from its EMI SE value of 12 dB, which corresponds 94% attenuation. The composite exhibits a partially reflecting and absorbing shielding nature, without any dominant shielding mechanism. The alternating current (AC) conductivity and skin depth value of the composites exhibit an inverse relationship with each other and influence the shielding thickness. The attenuating power of the PVDF-SiC composite with 60 volume % (vol.%) silicon carbide (SiC) changes from 84% to 99%, with an increase in sample thickness from 0.5 mm to 2 mm. Hence, thin and flexible paper-like EMI shield of PVDF-SiC composite can be easily prepared by simple, cost-effective approach for various shielding applications like electrostatic discharge shielding as well as EMI shielding.

通过简单的溶液流延工艺制备了聚偏二氟乙烯-碳化硅（PVDF-SiC）屏蔽复合薄膜。X射线衍射（XRD）和扫描电子显微镜（SEM）显示出聚合物和填料两者的存在，并且它们之间没有反应。复合材料的热膨胀系数（CTE）和拉伸强度呈现下降趋势，而电导率和电磁干扰（EMI）屏蔽值则随填料含量的增加而增加。的ε _{- [R} ，和黄褐色δ还发现在8.2–18 GHz频率范围内，复合材料的填充量会随填充物的增加而增加，这也影响了复合材料的屏蔽性能。1 mm厚度的高填料（SiC的60 vol。％）负载的复合材料表现出的直流（DC）电导率约为10 ^-5 S / m表示其在静电放电屏蔽应用中的潜力。从其12 dB的EMI SE值可以进一步证实这一点，这相当于94％的衰减。该复合材料表现出部分反射和吸收的屏蔽性质，而没有任何主要的屏蔽机制。复合材料的交流电（AC）电导率和趋肤深度值彼此呈反比关系，并影响屏蔽层厚度。具有60体积％（体积％）的碳化硅（SiC）的PVDF-SiC复合材料的衰减能力从84％变为99％，样品厚度从0.5 mm增加到2 mm。因此，可以通过简单的方法轻松制备PVDF-SiC复合材料的薄而柔软的纸状EMI屏蔽层。