Abstract

High dielectric loss is one of the current obstacles to the application of dielectric materials. In this paper, we synthesized a new dielectric material, i.e., (Yb + Ta)-co-doped TiO₂ dielectric material. The (Yb_0.5Ta_0.5)_xTi_1−xO₂ ceramics were synthesized by the solid-state reaction method. It has been found that (Yb_0.5Ta_0.5)_xTi_1−xO₂ ceramics had a dense ceramic microstructure, and (Yb_0.5Ta_0.5)_xTi_1−xO₂ ceramics exhibited the rutile TiO₂ structure. All (Yb_0.5Ta_0.5)_xTi_1−xO₂ ceramics exhibited low dielectric loss (< 0.1) and large dielectric constant (> 10⁵). The optimal dielectric properties are obtained at a doping level of x = 0.05 with dielectric constant of 5.1 × 10⁵ and dielectric loss of 0.037. Further study of the thermal stability of the dielectric properties was performed in the temperature range from − 50 to 250 ℃, which indicates that the ceramic sample with x = 0.05 co-dopant concentration maintains good dielectric properties in the temperature range from − 50 to 100 ℃. XPS shows that high dielectric properties can be explained by the electron-pinned defect-dipole mechanism.

中文翻译：

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具有大介电常数和低介电损耗的（Yb 0.5 Ta 0.5）x Ti 1-x O 2陶瓷的介电性能

摘要

高介电损耗是目前应用介电材料的障碍之一。在本文中，我们合成了一种新型的介电材料，即（Yb + Ta）共掺杂的TiO ₂介电材料。通过固相反应法合成了（Yb _0.5 Ta _0.5）_x Ti _{1- x} O ₂陶瓷。已经发现（Yb _0.5 Ta _0.5）_x Ti _{1- x} O ₂陶瓷具有致密的陶瓷微结构，并且（Yb _0.5 Ta _0.5）_x Ti _{1- x} O ₂陶瓷表现出金红石型TiO ₂结构。所有（Yb _0.5 Ta _0.5）_x Ti _{1- x} O ₂陶瓷均表现出低介电损耗（<0.1）和大介电常数（> 10 ⁵）。在x  = 0.05的掺杂水平下获得最佳介电性能，介电常数为5.1×10 ⁵，介电损耗为0.037。在−50至250℃的温度范围内对介电性能的热稳定性进行了进一步研究，这表明陶瓷样品的x = 0.05的共掺杂剂浓度在− 50至100℃的温度范围内保持良好的介电性能。XPS表明高介电性能可以通过电子固定缺陷偶极子机理来解释。