The accuracy control of oxygen-correlated defect densities in the lattice of metal oxide semiconductors is one of the remaining issues restricting the performance of metal oxide-based devices and their commercialization process. This study has successfully realized the gradient control of defects in amorphous InGaZnO through various strategies. X-ray photoelectron spectroscopy results reveal that the 350 °C thermal annealing accompanied with 300 °C pre-treatment is more conducive to improve the quality of a-IGZO and suppress the density of oxygen vacancy defects. Correspondingly, the initial electrical properties of a-IGZO thin-film transistor treated by gradient annealing procedures is superior to those of the devices with one-step 350 °C routine annealing or combined with an intermediate N 2 O plasma treatment. It is demonstrated that the gradient annealing procedures effectively improve the quality of a-IGZO bulk and its adjacent interfaces. More importantly, the not...

中文翻译：

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高性能薄膜晶体管的非晶InGaZnO中的缺陷梯度控制

金属氧化物半导体晶格中与氧相关的缺陷密度的精确控制是限制基于金属氧化物的器件的性能及其商业化过程的剩余问题之一。这项研究已经成功地通过各种策略实现了非晶InGaZnO中缺陷的梯度控制。X射线光电子能谱分析结果表明，在350°C的热退火条件下进行300°C的预处理，更有利于提高a-IGZO的质量并抑制氧空位缺陷的密度。相应地，通过梯度退火工艺处理的a-IGZO薄膜晶体管的初始电性能优于采用一步式350°C常规退火或与中间N 2 O等离子体处理相结合的器件。结果表明，梯度退火程序可有效提高a-IGZO块及其相邻界面的质量。更重要的是，