Abstract
The accuracy control of oxygen-correlated defect densities in the lattice of metal oxide semiconductors is one of the remaining issues restricting the performance of metal oxide-based devices and their commercialization process. This study has successfully realized the gradient control of defects in amorphous InGaZnO through various strategies. X-ray photoelectron spectroscopy results reveal that the 350 °C thermal annealing accompanied with 300 °C pre-treatment is more conducive to improve the quality of a-IGZO and suppress the density of oxygen vacancy defects. Correspondingly, the initial electrical properties of a-IGZO thin-film transistor treated by gradient annealing procedures is superior to those of the devices with one-step 350 °C routine annealing or combined with an intermediate N2O plasma treatment. It is demonstrated that the gradient annealing procedures effectively improve the quality of a-IGZO bulk and its adjacent interfaces. More importantly, the notorious instability induced by the negative bias and illumination stress is significantly suppressed.
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