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Structure and microwave dielectric properties of BaAl 2−2x (CuSi) x Si 2 O 8 ceramics
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-01-20 , DOI: 10.1007/s10854-019-02798-5
Xinkan Yan , Shihua Ding , Yun Zhang , Tianxiu Song , Long Huang , Xiaoyun Zhang

Abstract

The sintering behavior, phase composition, microstructure and dielectric properties of BaAl2−2x(CuSi)xSi2O8 (x = 0, 0.01, 0.015, 0.02, 0.04, 0.06, 0.08) ceramics prepared via solid-state reaction route were investigated. Deviation between theoretical and experimental permittivity of BaAl2Si2O8 ceramics was discussed, and the theoretical and experimental temperature coefficient of resonant frequency (τf) was also compared. The results showed that substituting (Cu0.5Si0.5)3+ for Al3+ in matrix of hexacelsian could lower the sintering temperature from 1400 to 1200 °C and greatly promote the transformation of hexacelsian-to-celsian. And the single celsian phase was obtained for the compositions with x ≥ 0.02. The bulk densities, microstructure and dielectric properties of BaAl2−2x(CuSi)xSi2O8 ceramics were improved by doping a small quantity of (Cu0.5Si0.5)3+ ions in the BaAl2Si2O8. The BaAl1.96(CuSi)0.02Si2O8 ceramics sintered at 1300 °C obtained good microwave dielectric properties: εr = 6.7, Q × f = 31,276 GHz, τf = − 17.17 × 10−6 °C−1.



中文翻译:

BaAl 2−2x(CuSi)x Si 2 O 8陶瓷的结构和微波介电性能

摘要

 通过固态反应路线制备的BaAl 2−2 x(CuSi)x Si 2 O 8x = 0、0.01、0.015、0.02、0.04、0.06、0.08)陶瓷的烧结行为,相组成,微观结构和介电性能被调查了。的BaAl的理论和实验之间的介电常数偏差2的Si 2个ö 8讨论了陶瓷,和谐振频率(的理论和实验的温度系数τ ˚F)也进行了比较。结果表明,用(Cu 0.5 Si 0.53+代替Al 3+六方晶系中的陶瓷可以将烧结温度从1400°C降低到1200°C,并极大地促进了六方晶向硅质体的转变。并用于与所述组合物获得的单晶钡长石相X  ≥0.02。巴力的堆积密度,微结构和介电性能2-2 X(CUSI)X的Si 2 ö 8个陶瓷的通过掺杂(铜的少量改进的0.5的Si 0.53+离子在的BaAl 2的Si 2 ö 8。BaAl 1.96(CuSi)0.02 Si 2 O 8在1300烧结陶瓷℃下获得了良好的微波介电性能:ε - [R  = 6.7,Q  ×  ˚F  = 31276千兆赫,τ ˚F  = - 17.17×10 -6 ℃, -1

更新日期:2020-01-21
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