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Structure and microwave dielectric properties of BaAl2−2x(CuSi)xSi2O8 ceramics

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The sintering behavior, phase composition, microstructure and dielectric properties of BaAl2−2x(CuSi)xSi2O8 (x = 0, 0.01, 0.015, 0.02, 0.04, 0.06, 0.08) ceramics prepared via solid-state reaction route were investigated. Deviation between theoretical and experimental permittivity of BaAl2Si2O8 ceramics was discussed, and the theoretical and experimental temperature coefficient of resonant frequency (τf) was also compared. The results showed that substituting (Cu0.5Si0.5)3+ for Al3+ in matrix of hexacelsian could lower the sintering temperature from 1400 to 1200 °C and greatly promote the transformation of hexacelsian-to-celsian. And the single celsian phase was obtained for the compositions with x ≥ 0.02. The bulk densities, microstructure and dielectric properties of BaAl2−2x(CuSi)xSi2O8 ceramics were improved by doping a small quantity of (Cu0.5Si0.5)3+ ions in the BaAl2Si2O8. The BaAl1.96(CuSi)0.02Si2O8 ceramics sintered at 1300 °C obtained good microwave dielectric properties: εr = 6.7, Q × f = 31,276 GHz, τf = − 17.17 × 10−6 °C−1.

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Acknowledgements

This work was supported by the Chun Hui Project of the Ministry of Education of the People’s Republic of China (No. Z2011077), National Natural Science Foundation of China (No. 11074203) and Graduate Innovation Foundation of Xihua University (No. ycjj2019031), the Sichuan Science and Technology Program (2019YFG0234), and National Natural Science Foundation of China (51902268).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Xihua University, Chengdu, 610039, China

    Xinkan Yan, Shihua Ding, Yun Zhang, Tianxiu Song, Long Huang & Xiaoyun Zhang

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  1. Xinkan Yan
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  2. Shihua Ding
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  3. Yun Zhang
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  4. Tianxiu Song
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Correspondence to Shihua Ding.

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Yan, X., Ding, S., Zhang, Y. et al. Structure and microwave dielectric properties of BaAl2−2x(CuSi)xSi2O8 ceramics. J Mater Sci: Mater Electron 31, 2591–2597 (2020). https://doi.org/10.1007/s10854-019-02798-5

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