In the current study, Neodymium oxide (Nd₂O₃) was prepared by sol–gel method and deposited on P-type 〈100〉 silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectra (EDS) and atomic force microscopy (AFM). Nd–O bond formation was proven by FTIR, also cubic- Nd₂O₃ (c-Nd₂O₃) phase was detected by XRD. According to EDS analysis, neodymium concentration was approximately 59.41% while oxygen concentration was calculated as 10.21%. The amount of excess oxygen was 9.45% was originated by cristobalite formation. In addition, electrical characterizations of Nd₂O₃/p-Si MOS capacitor was performed by capacitance–voltage (C–V), conductance–voltage G/ω–V measurements at different frequencies between 250 kHz and 1 MHz. The maximum value of measured capacitance–voltage (C–V) and conductance–voltage (G/ω–V) was increased with decreasing in the applied voltage frequencies and after series resistance (R_s) correction, the measured C–V and G/ω–V characteristics, G/ω behavior started to decrease with rising the frequencies. According to the observed frequency dispersion, the deposited Nd₂O₃ on P-type 〈100〉 silicon exhibits stable insulation property for future microelectronic applications.

中文翻译：

---

溶胶-凝胶法对Nd 2 O 3的结构表征和电学性质

在当前的研究中，通过溶胶-凝胶法制备了氧化钕（Nd ₂ O ₃）并沉积在P型<100>硅片上。样品的化学表征通过傅立叶变换红外光谱（FTIR），X射线衍射（XRD），扫描电子显微镜（SEM），能量色散光谱（EDS）和原子力显微镜（AFM）进行。FTIR证明了Nd–O键的形成，立方Nd ₂ O ₃（c -Nd ₂ O ₃XRD检测到）相。根据EDS分析，钕浓度约为59.41％，而氧气浓度经计算为10.21％。过量氧气的9.45％是由方石英的形成引起的。另外，钕的电表征₂ ö ₃ / p型硅MOS电容器用电容-电压进行（Ç - V），电导电压ģ / ω - V在250千赫和1兆赫之间的不同频率测量。测量的电容-电压（的最大值Ç - V和电导-电压（）ģ / ω - V）与在所施加的电压的频率和后串联电阻降低而升高（ř_小号）校正，测量Ç - V和g ^ / ω - V特性，ģ / ω行为开始与频率上升到下降。根据观察到的频率色散，在P型<100>硅上沉积的Nd ₂ O ₃表现出稳定的绝缘性能，适合将来的微电子应用。