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Structural characterization and electrical properties of Nd 2 O 3 by sol–gel method
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-01-09 , DOI: 10.1007/s10854-020-02857-2
Ramazan Lok , Erhan Budak , Ercan Yilmaz

In the current study, Neodymium oxide (Nd2O3) was prepared by sol–gel method and deposited on P-type 〈100〉 silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectra (EDS) and atomic force microscopy (AFM). Nd–O bond formation was proven by FTIR, also cubic- Nd2O3 (c-Nd2O3) phase was detected by XRD. According to EDS analysis, neodymium concentration was approximately 59.41% while oxygen concentration was calculated as 10.21%. The amount of excess oxygen was 9.45% was originated by cristobalite formation. In addition, electrical characterizations of Nd2O3/p-Si MOS capacitor was performed by capacitance–voltage (CV), conductance–voltage G/ωV measurements at different frequencies between 250 kHz and 1 MHz. The maximum value of measured capacitance–voltage (CV) and conductance–voltage (G/ωV) was increased with decreasing in the applied voltage frequencies and after series resistance (Rs) correction, the measured CV and G/ωV characteristics, G/ω behavior started to decrease with rising the frequencies. According to the observed frequency dispersion, the deposited Nd2O3 on P-type 〈100〉 silicon exhibits stable insulation property for future microelectronic applications.

中文翻译:

溶胶-凝胶法对Nd 2 O 3的结构表征和电学性质

在当前的研究中,通过溶胶-凝胶法制备了氧化钕(Nd 2 O 3)并沉积在P型<100>硅片上。样品的化学表征通过傅立叶变换红外光谱(FTIR),X射线衍射(XRD),扫描电子显微镜(SEM),能量色散光谱(EDS)和原子力显微镜(AFM)进行。FTIR证明了Nd–O键的形成,立方Nd 2 O 3c -Nd 2 O 3XRD检测到)相。根据EDS分析,钕浓度约为59.41%,而氧气浓度经计算为10.21%。过量氧气的9.45%是由方石英的形成引起的。另外,钕的电表征2 ö 3 / p型硅MOS电容器用电容-电压进行(Ç - V),电导电压ģ / ω - V在250千赫和1兆赫之间的不同频率测量。测量的电容-电压(的最大值Ç - V和电导-电压()ģ / ω - V)与在所施加的电压的频率和后串联电阻降低而升高(ř小号)校正,测量Ç - Vg ^ / ω - V特性,ģ / ω行为开始与频率上升到下降。根据观察到的频率色散,在P型<100>硅上沉积的Nd 2 O 3表现出稳定的绝缘性能,适合将来的微电子应用。
更新日期:2020-01-09
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