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Structural characterization and electrical properties of Nd2O3 by sol–gel method

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Abstract

In the current study, Neodymium oxide (Nd2O3) was prepared by sol–gel method and deposited on P-type 〈100〉 silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectra (EDS) and atomic force microscopy (AFM). Nd–O bond formation was proven by FTIR, also cubic- Nd2O3 (c-Nd2O3) phase was detected by XRD. According to EDS analysis, neodymium concentration was approximately 59.41% while oxygen concentration was calculated as 10.21%. The amount of excess oxygen was 9.45% was originated by cristobalite formation. In addition, electrical characterizations of Nd2O3/p-Si MOS capacitor was performed by capacitance–voltage (C–V), conductance–voltage G/ω–V measurements at different frequencies between 250 kHz and 1 MHz. The maximum value of measured capacitance–voltage (C–V) and conductance–voltage (G/ω–V) was increased with decreasing in the applied voltage frequencies and after series resistance (Rs) correction, the measured C–V and G/ω–V characteristics, G/ω behavior started to decrease with rising the frequencies. According to the observed frequency dispersion, the deposited Nd2O3 on P-type 〈100〉 silicon exhibits stable insulation property for future microelectronic applications.

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Authors and Affiliations

  1. Department of Physics, Faculty of Art and Science, Bolu Abant Izzet Baysal University, 14280, Bolu, Turkey

    Ramazan Lok & Ercan Yilmaz

  2. Center for Nuclear Radiation Detector Research and Applications, Bolu Abant Izzet Baysal University, 14280, Bolu, Turkey

    Ramazan Lok, Erhan Budak & Ercan Yilmaz

  3. Department of Chemistry, Faculty of Art and Science, Bolu Abant Izzet Baysal University, 14280, Bolu, Turkey

    Erhan Budak

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  1. Ramazan Lok
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  2. Erhan Budak
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  3. Ercan Yilmaz
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Correspondence to Erhan Budak.

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Lok, R., Budak, E. & Yilmaz, E. Structural characterization and electrical properties of Nd2O3 by sol–gel method. J Mater Sci: Mater Electron 31, 3111–3118 (2020). https://doi.org/10.1007/s10854-020-02857-2

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