Abstract

Metal-doped tungsten trioxide (M = Cd, In, and Sn:WO₃) thin films were prepared using sol–gel spin-coating and their structural, optical, electrical properties were studied for the fabrication of p–n heterojunction diode. X-ray diffraction (XRD) analysis revealed that Cd, In, and Sn dopants have a strong influence on the lattice parameters and defect factor without making any changes in the structure. Scanning electron microscope (SEM) images reflect that the dopants have a strong impact on the surface morphologies of the WO₃ thin film. The UV–visible analysis shows a high optical transmittance (∼82%) and variation in the bandgap was also obtained. The dc electrical conductivity (σ_dc) indicates that the band conduction mechanism is predominant in the pure and doped M:WO₃ thin films. Current density–voltage (J–V) characteristics of WO₃/p-Si, Cd:WO₃/p-Si, In:WO₃/p-Si, and Sn:WO₃/p-Si diodes were measured under dark and illumination conditions. In which, the Sn:WO₃/p-Si diode exhibits better performance with good ideality factor (n = 2.6) and barrier height (Ф_B = 0.90) values for under illumination. Most importantly, the J–V–T characteristics of all the fabricated diodes were analyzed with different temperatures (303–423 K).

中文翻译：

---

金属（M = Cd，In和Sn）掺杂剂对旋涂WO 3薄膜性能的影响以及与温度有关的异质结二极管的制造

摘要

使用溶胶-凝胶旋涂法制备了金属掺杂的三氧化钨（M = Cd，In和Sn：WO ₃）薄膜，并研究了其结构，光学和电学性质，用于制造p-n异质结二极管。X射线衍射（XRD）分析表明，Cd，In和Sn掺杂剂对晶格参数和缺陷因子有很大影响，而不会改变结构。扫描电子显微镜（SEM）图像反映出掺杂剂对WO ₃薄膜的表面形态具有强烈影响。紫外可见分析显示出较高的透光率（〜82％），并且带隙也有所变化。直流电导率（σ_直流）表明在纯和掺杂的M：WO ₃薄膜中，带导机制是主要的。在黑暗条件下测量了WO ₃ / p-Si，Cd：WO ₃ / p-Si，In：WO ₃ / p-Si和Sn：WO ₃ / p-Si二极管的电流密度-电压（J - V）特性和照明条件。其中，Sn的：WO ₃ / p型硅二极管表现出更好的具有良好的理想因子性能（Ñ  = 2.6）和势垒高度（Ф_乙 = 0.90），用于在照明下的值。最重要的是，J – V – T 在不同温度（303–423 K）下分析了所有已制造二极管的特性。