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Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes

  • Original Paper: Characterization methods of sol–gel and hybrid materials
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Abstract

Metal-doped tungsten trioxide (M = Cd, In, and Sn:WO3) thin films were prepared using sol–gel spin-coating and their structural, optical, electrical properties were studied for the fabrication of p–n heterojunction diode. X-ray diffraction (XRD) analysis revealed that Cd, In, and Sn dopants have a strong influence on the lattice parameters and defect factor without making any changes in the structure. Scanning electron microscope (SEM) images reflect that the dopants have a strong impact on the surface morphologies of the WO3 thin film. The UV–visible analysis shows a high optical transmittance (∼82%) and variation in the bandgap was also obtained. The dc electrical conductivity (σdc) indicates that the band conduction mechanism is predominant in the pure and doped M:WO3 thin films. Current density–voltage (J–V) characteristics of WO3/p-Si, Cd:WO3/p-Si, In:WO3/p-Si, and Sn:WO3/p-Si diodes were measured under dark and illumination conditions. In which, the Sn:WO3/p-Si diode exhibits better performance with good ideality factor (n = 2.6) and barrier height (ФB = 0.90) values for under illumination. Most importantly, the J–V–T characteristics of all the fabricated diodes were analyzed with different temperatures (303–423 K).

Highlights

  • High quality WO3 thin films were prepared by sol–gel spin coating technique.

  • Effect of metal dopants (Cd, In and Sn) on structural and optical properties of WO3 thin films were investigated.

  • Microplate-like structure was grown on glass substrates.

  • High-sensitive heterojunction diodes were fabricated.

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References

  1. Li N, Stubhan T, Luechinger NA, Halim SC, Matt GJ, Ameri T, Brabec CJ (2012) Org Electron 13:2479

    Article  CAS  Google Scholar 

  2. Kadir R, Zhang W, Wang Y, Ou JZ, Wlodarski W, OMullane AP, Bryantc G, Taylor M, Kalantar-zadeh K (2015) J Mater Chem A 3:7994

    Article  Google Scholar 

  3. Kim YH, Kwon S, Lee JH, Park SM, Lee YM, Kim JW (2011) J Phys Chem C 115:6599

    Article  CAS  Google Scholar 

  4. Eom TS, Kim KH, Bark CW, Choi HW (2014) Mol Cryst Liq Cryst 602:81

    Article  CAS  Google Scholar 

  5. Meng X, Quenneville F, Venne F, Di Mauro E, Isik D, Barbosa M, Drolet Y, Natile MM, Rochefort D, Soavi F, Santato C (2015) J Phys Chem C 119:21732

    Article  CAS  Google Scholar 

  6. Avellaneda CO, Bulhoes LOS (2003) Solid State Ion 165:117

    Article  CAS  Google Scholar 

  7. Fang G, Liu Z, Yao KL (2001) J Phys D: Appl Phys 34:2260

    Article  CAS  Google Scholar 

  8. Wang W, Chen S, Yang PX, Duana CG, Wang LW (2013) J Mater Chem A 1:1078

    Article  CAS  Google Scholar 

  9. Raja M, Chandrasekaran J, Balaji M (2017) Silicon 9:201

    Article  CAS  Google Scholar 

  10. Raja M, Chandrasekaran J, Balaji M, Janarthanan B (2016) Mater Sci Semicond Process 56:145

    Article  CAS  Google Scholar 

  11. Vuong NM, Kim D, Kim H (2015) Sci Rep 5:11040

    Article  Google Scholar 

  12. Patil PS, Mujawar SH, Inamdar AI, Shinde PS, Deshmukh HP, Sadale SB (2005) Appl Surf Sci 252:1643

    Article  CAS  Google Scholar 

  13. Lethy KJ, Beena D, Pillai VPM, Ganesan V (2008) J Appl Phys 104:033515

    Article  Google Scholar 

  14. Mukherjee R, Prajapati CS, Sahay PP (2014) J Therm Spray Technol 23:1445

    Article  CAS  Google Scholar 

  15. Balaji M, Chandrasekaran J, Raja M, Marnadu R (2019) Mater Res Express 6:106404

    Article  CAS  Google Scholar 

  16. Jansi Rani B, Ravi G, Yuvakkumar R, Ravichandran S, Ameen F, Al Nadhary S (2018) Renew Energy https://doi.org/10.1016/j.renene.2018.10.067

    Article  CAS  Google Scholar 

  17. Scafé E, Maletta G, Tomaciello R, Alessandrini P, Camanzi A, De Angelis L, Galluzzi F (1983) Sol Cells 10:17

    Article  Google Scholar 

  18. Deng Y, Yang J, Yang R, Shen K, Wang D, Wang D (2016) AIP Adv 6:015203

    Article  Google Scholar 

  19. Avellaneda CO, Bueno PR, Faria RC, Bulhoes LOS (2001) Electrochim Acta 46:1977

    Article  CAS  Google Scholar 

  20. Tesfamichael T, Ponzoni A, Ahsan M, Faglia G (2012) Sens Actuators B 168:345

    Article  CAS  Google Scholar 

  21. Mukherjee R, Prajapati CS, Sahay PP (2014) J Mater Eng Perform 23:3141

    Article  CAS  Google Scholar 

  22. Park KW (2005) Electrochim Acta 50:4690

    Article  CAS  Google Scholar 

  23. Bathe SR, Patil PS (2008) Solid State Ion 179:314

    Article  CAS  Google Scholar 

  24. Gaury J, Kelder EM, Bychkov E, Biskos G (2013) Thin Solid Films 534:32

    Article  CAS  Google Scholar 

  25. Mehmood F, Iqbal J, Jan T, Ahmed W, Ahmed W, Arshad A, Mansoor Q, Ilyas SZ, Ismail M, Ahmad I (2016) Ceram Int 42:14334

    Article  CAS  Google Scholar 

  26. Kalanur SS (2019) Catalysts 9:456

    Article  CAS  Google Scholar 

  27. Balaji M, Chandrasekaran J, Raja M, Rajesh S (2016) J Mater Sci: Mater Electron 27:11646

    CAS  Google Scholar 

  28. Shannon RD (1976) Acta Cryst A 32:751

    Article  Google Scholar 

  29. Zhao Y, Li Yuehua, Ren X, Gao F, Zhao H (2017) Nanomaterials 7:410

    Article  Google Scholar 

  30. Cullity BD, Stock SR (2001) Elements of X-ray diffraction. 3rd edn. Prentice-Hall Inc., p 167, https://www.scholars.northwestern.edu/en/publications/elements-of-x-ray-diffraction-third-edition

  31. Patel PP, Datta MK, Velikokhatnyi OI, Kuruba R, Damodaran K, Jampani P, Gattu B, Shanthi PM, Damle SS, Kumta PN, Sci Rep. https://doi.org/10.1038/srep28367

  32. Marnadu R, Chandrasekaran J, Maruthamuthu S, Vivek P, Balasubramani V, Balraju P (2019) J Inorg Organomet Polym Mater, https://doi.org/10.1007/s10904-019-01285-y

    Article  Google Scholar 

  33. Marnadu R, Chandrasekaran J, Raja M, Balaji M, Maruthamuthu S, Balraju P (2018) Superlattices Microstruct 119:134

    Article  CAS  Google Scholar 

  34. Regragui M, Jousseaume V, Addou M, Outzourhit A, Bernede JC, El Idrissi B (2001) Thin Solid Films 397:238

    Article  CAS  Google Scholar 

  35. Sze M, Ng Kwok K Physics of semiconductor devices. (3rd Ed., Simon, 2006). https://www.wiley.com/en-us/Physics+of+Semiconductor+Devices%2C+3rd+Edition-p-9780471143239

    Book  Google Scholar 

  36. Gayen RN, Paul R (2016) Thin Solid Films 605:248

    Article  CAS  Google Scholar 

  37. Marnadu R, Chandrasekaran J, Maruthamuthu S, Balasubramani V, Vivek P, Suresh R (2019) Appl. Surf. Sci. 480:308

    Article  CAS  Google Scholar 

  38. Marnadu R, Chandrasekaran J, Raja M, Balaji M, Balasubramani V (2018) J Mater Sci Mater Electron 29:2618

    Article  CAS  Google Scholar 

  39. Vivek P, Chandrasekaran J, Marnadu R, Maruthamuthu S, Balasubramani V (2019) Superlattices Microstruct. 133:106197l

    Article  Google Scholar 

  40. Marnadu R, Chandrasekaran J, Vivek P, Balasubramani V, Maruthamuthu S (2019) Z Phys Chem, https://doi.org/10.1515/zpch-2018-1289.

    Article  CAS  Google Scholar 

  41. Cetin H, Ayyildiz E (2007) Physica B 394:93

    Article  CAS  Google Scholar 

  42. Dokme I (2011) Microelectron Reliab 51:360

    Article  Google Scholar 

Download references

Acknowledgements

The authors gratefully acknowledge the financial support from the DST, Government of India, for the major research project (EMR/2016/007874).

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Authors and Affiliations

  1. Vivekanandha College of Arts and Sciences for Women, Tiruchengode, 637205, Tamil Nadu, India

    M. Raja

  2. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, 641020, Tamil Nadu, India

    J. Chandrasekaran & R. Marnadu

  3. Department of Physics, Bannari Amman Institute of Technology, Sathyamanglam, 638401, Tamil Nadu, India

    M. Balaji

  4. GRD Centre for Materials Research, Department of Physics, PSG College of Technology, Coimbatore, 641004, Tamil Nadu, India

    P Kathirvel

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  1. M. Raja
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  2. J. Chandrasekaran
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Correspondence to J. Chandrasekaran.

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Raja, M., Chandrasekaran, J., Balaji, M. et al. Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes. J Sol-Gel Sci Technol 93, 495–505 (2020). https://doi.org/10.1007/s10971-019-05207-9

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  • DOI: https://doi.org/10.1007/s10971-019-05207-9

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