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Competing Fractional Quantum Hall and Electron Solid Phases in Graphene
Physical Review Letters ( IF 8.1 ) Pub Date : 2019-01-18 00:00:00 , DOI: 10.1103/physrevlett.122.026802
Shaowen Chen , Rebeca Ribeiro-Palau , Kang Yang , Kenji Watanabe , Takashi Taniguchi , James Hone , Mark O. Goerbig , Cory R. Dean

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the

N=2

Landau level. Similar to high-mobility

GaAs/AlGaAs

heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the

BT

phase diagram of the electron solid phase. The hierarchy of reentrant states suggests spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.



中文翻译:

石墨烯中竞争的分数量子霍尔和电子固相

我们报告了石墨烯中可重入整数量子霍尔效应的实验观察,该现象出现在石墨烯中。

ñ=2个

兰道级。类似于高机动性

砷化镓/铝镓砷

异质结构,其影响是由于不可压缩的分数量子霍尔态与电子固相之间的竞争。石墨烯的可调性使我们能够测量

-Ť

电子固相的相图。折返态的等级表明,自旋和谷自由度在确定基态能量中起作用。我们发现熔化温度与磁场成比例,并构造了电子液-固转变的相图。

更新日期:2019-01-18
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