Abstract This paper reports the synthesis of single-crystalline GePb alloy films on a Ge(100) substrate by magnetron sputter epitaxy. The as-grown GePb alloy films possess high crystalline quality and no dislocations, as revealed by X-ray diffractometry, transmission electron microscopy. The Pb composition of the GePb alloy was about 0.4% at the growth temperature of 250 °C and it decreased with increasing substrate temperature up to 400 °C. The thermal stability of the GePb alloy was studied using Raman spectra and atomic force microscopy (AFM)results, and it was observed that Pb segregated from the GePb alloy above 400 °C. The successful growth of single-crystal GePb lays the foundation for future GePb device fabrication.

中文翻译：

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磁控溅射外延在Ge衬底上生长单晶GePb薄膜

摘要 本文报道了通过磁控溅射外延在 Ge(100) 衬底上合成单晶 GePb 合金薄膜。X 射线衍射、透射电子显微镜显示，生长的 GePb 合金薄膜具有高结晶质量和无位错。GePb 合金的 Pb 成分在 250 °C 的生长温度下约为 0.4%，并且随着衬底温度升高至 400 °C 而下降。使用拉曼光谱和原子力显微镜 (AFM) 结果研究了 GePb 合金的热稳定性，观察到 Pb 在 400 °C 以上从 GePb 合金中分离。单晶 GePb 的成功生长为未来 GePb 器件的制造奠定了基础。