Abstract Unavoidable impurities form in Sb2S3 absorber fabricated by conventional chemical bath deposition method which is harmful to the photovoltaic performance of Sb2S3-sensitized solar cells. To obtain high quality Sb2S3 absorber, a two-step template method is introduced to deposit Sb2S3 on mesoporous TiO2 film. This template method is performed by dipping ZnS-coated TiO2 films in a Sb source solution for several minutes. This low temperature method with short operation time allows large area deposition of Sb2S3. Properties of ZnS and Sb2S3 are systematically studied. X-ray photoelectron spectroscopy confirms the absence of impurities. The optimized Sb2S3 device exhibits a power conversion efficiency (PCE) of 3.69%, with an open-circuit voltage of 0.514 V, a short-circuit current-density of 12.14 mA/cm2, and a fill factor of 59.1% under AM 1.5G illumination which is better than the device fabricated by chemical bath deposition. The PCE of our Sb2S3 devices showed an obvious increase after 1–2 months storage which may be caused by reconstruction of the ZnS/Sb2S3 coating fabricated by partial cation exchange.

中文翻译：

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Sb2S3 的模板沉积用于固态敏化太阳能电池

摘要 常规化学浴沉积法制备的Sb2S3吸收体中不可避免地存在杂质，对Sb2S3敏化太阳能电池的光伏性能有害。为了获得高质量的 Sb2S3 吸收剂，引入了两步模板法在介孔 TiO2 薄膜上沉积 Sb2S3。这种模板方法是通过将涂有 ZnS 的 TiO2 薄膜在 Sb 源溶液中浸渍几分钟来进行的。这种操作时间短的低温方法允许大面积沉积 Sb2S3。系统地研究了 ZnS 和 Sb2S3 的性质。X 射线光电子能谱证实不存在杂质。优化后的 Sb2S3 器件的功率转换效率 (PCE) 为 3.69%，开路电压为 0.514 V，短路电流密度为 12.14 mA/cm2，AM 1 下的填充因子为 59.1%。5G 照明，优于化学浴沉积制造的器件。我们的 Sb2S3 器件的 PCE 在储存 1-2 个月后显示出明显的增加，这可能是由部分阳离子交换制备的 ZnS/Sb2S3 涂层的重建引起的。