Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields^1,2,3. Different device concepts have been predicted^4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves⁶, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields⁷ or Néel spin–orbit torque⁸ is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures^9,10,11,12, which suppresses Joule heating caused by switching currents and may enable low-energy-consuming electronic devices. Here, we combine the two material classes to explore changes in the resistance of the high-Néel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field that are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunnelling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory that is fully operational in strong magnetic fields and has the potential for low-energy and high-density memory applications.

基于反铁磁（AFM）材料的自旋电子器件有望实现快速开关速度和针对^1,2,3磁场的鲁棒性。^4,5,5并已通过实验证明了不同的器件概念，例如用作自旋阀⁶的低温AFM隧道结或室温AFM存储器，其结合磁场^7的热加热或Néel自旋–轨道转矩⁸用于信息写入过程。另一方面，压电材料被用来通过多铁性异质结构中的电场控制磁场^9,10,11,12，它抑制了由开关电流引起的焦耳热，并可以实现低能耗的电子设备。在这里，我们将两种材料组合在一起，以探索由压电应变引起的高耐高温反铁磁体MnPt的电阻变化。我们发现在室温和零电场下的两个非易失性电阻状态在高达60 T的磁场中都是稳定的。此外，应变感应电阻切换过程对磁场不敏感。集成在隧道结中可以进一步放大电阻。在室温下，隧道各向异性磁阻达到〜11.2％。总体而言，我们展示了压电材料，