Wafer‐Scale Fabrication of High‐Performance n‐Type Polymer Monolayer Transistors Using a Multi‐Level Self‐Assembly Strategy,Advanced Materials

当前位置： X-MOL 学术 › Adv. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Wafer‐Scale Fabrication of High‐Performance n‐Type Polymer Monolayer Transistors Using a Multi‐Level Self‐Assembly Strategy
Advanced Materials ( IF 27.4 ) Pub Date : 2018-12-14 , DOI: 10.1002/adma.201806747
Ze‐Fan Yao ₁ , Yu‐Qing Zheng ₂ , Qi‐Yi Li ₁ , Ting Lei ₃ , Song Zhang ₄ , Lin Zou ₅ , Han‐Yu Liu ₁ , Jin‐Hu Dou ₁ , Yang Lu ₁ , Jie‐Yu Wang ₁ , Xiaodan Gu ₄ , Jian Pei ₁

Affiliation

Wafer‐scale fabrication of high‐performance uniform organic electronic materials is of great challenge and has rarely been realized before. Previous large‐scale fabrication methods always lead to different layer thickness and thereby poor film and device uniformity. Herein, the first demonstration of 4 in. wafer‐scale, uniform, and high‐performance n‐type polymer monolayer films is reported, enabled by controlling the multi‐level self‐assembly process of conjugated polymers in solution. Since the self‐assembly process happened in solution, the uniform 2D polymer monolayers can be facilely deposited on various substrates, and theoretically without size limitations. Polymer monolayer transistors exhibit high electron mobilities of up to 1.88 cm² V⁻¹ s⁻¹, which is among the highest in n‐type monolayer organic transistors. This method allows to easily fabricate n‐type conjugated polymers with wafer‐scale, high uniformity, low contact resistance, and excellent transistor performance (better than the traditional spin‐coating method). This work provides an effective strategy to prepare large‐scale and uniform 2D polymer monolayers, which could enable the application of conjugated polymers for wafer‐scale sophisticated electronics.

更新日期：2018-12-14

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11