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Light Emitting Diodes Based on Inorganic Composite Halide Perovskites
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-12-12 , DOI: 10.1002/adfm.201807345
Xiujun Lian 1 , Xi Wang 1 , Yichuan Ling 1 , Eric Lochner 1 , Lei Tan 1 , Yan Zhou 2 , Biwu Ma 2, 3 , Kenneth Hanson 2, 3 , Hanwei Gao 1, 3, 4
Affiliation  

CsPbBr3 is a promising type of light‐emitting halide perovskite with inorganic composition and desirable thermal stability. The luminescence efficiency of pristine CsPbBr3 thin films, however, appears to be limited. In this work, light emitting diodes based on CsPbBr3|Cs4PbBr6 composites are demonstrated. Both quantum efficiency and emission brightness are improved significantly compared with similar devices constructed using pure CsPbBr3. The high brightness can be attributed to the enhanced radiative recombination from CsPbBr3 crystallites confined in the Cs4PbBr6 host matrix. The unfavorable charge transport property of Cs4PbBr6 can be circumvented by optimizing the ratio between the host and the guest components and the total thickness of the composite thin films. The inorganic composition of the emitting layer also leads to improved device stability under the condition of continuous operation.

中文翻译:

基于无机复合卤化物钙钛矿的发光二极管

CsPbBr 3是一种很有前途的发光卤化物钙钛矿,具有无机成分和理想的热稳定性。然而,原始CsPbBr 3薄膜的发光效率似乎受到限制。在这项工作中,展示了基于CsPbBr 3 | Cs 4 PbBr 6复合材料的发光二极管。与使用纯CsPbBr 3构造的类似器件相比,量子效率和发射亮度都得到了显着提高。高亮度归因于封闭在Cs 4 PbBr 6中的CsPbBr 3晶粒增强的辐射复合主机矩阵。通过优化主体和客体组分之间的比例以及复合薄膜的总厚度,可以避免Cs 4 PbBr 6的不利的电荷传输性质。在连续操作的条件下,发光层的无机成分还导致改善的器件稳定性。
更新日期:2018-12-12
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