Nitrogen Tuned Charge Redistribution and Orbital Reconfiguration in Fe/MgO Interface for Significant Interfacial Magnetism Tunability,Advanced Functional Materials

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Nitrogen Tuned Charge Redistribution and Orbital Reconfiguration in Fe/MgO Interface for Significant Interfacial Magnetism Tunability
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-12-10 , DOI: 10.1002/adfm.201806677
Shiru Wang ₁ , Mingke Yao ₁ , Zirun Li ₂ , Chun Feng ₁ , Lei Wang ₁ , Xiaolei Tang ₁ , Peng Kang ₃ , Bin Zhang ₄ , Wenbo Mi ₂ , Guanghua Yu ₁

Affiliation

Modulating the orbital configuration of ferromagnetic metal (FM)/metal‐oxide (MO) interfaces is crucial for obtaining a controllable interfacial magnetism for constructing energy‐efficient magnetic memory and logic devices. The traditional works of orbital regulation depend on external fields, such as electric field, temperature field, and stress field. This work proposes a novel orbital modulation strategy by modifying the coordination environment of FM/MO interface with nitrogen (N) incorporation. By preparing a Fe/MgO bilayer at a N₂ atmosphere, N atoms occupy the interstitial sites of the Fe lattice, which induces a charge redistribution at the Fe/MgO interface and toggles a prominent orbital reconstruction of Fe with an increment of out‐of‐plane orbital occupancy. Therefore, the orbital magnetism is tuned effectively, which remarkably strengthens the interfacial magnetic anisotropy energy by 0.6 erg cm⁻² and enables a broad magnetic anisotropy tunability from in‐plane to perpendicular direction. Besides, the Fe thickness for maintaining perpendicular magnetic anisotropy extends from less than 1 to 3 nm, which is favorable for improving the signal‐to‐noise ratio and stability of devices in nanoscale. These findings provide an external‐field‐independent strategy of orbital engineering for tailoring obit‐controlled performance at FM/MO heterointerfaces, which practically advances the magnetic storage and logic devices.

中文翻译：

Fe / MgO界面中的氮调谐电荷重分布和轨道重配置，可实现显着的界面磁性可调谐性

调制铁磁金属（FM）/金属氧化物（MO）接口的轨道配置对于获得可控的界面磁性以构建节能的磁存储器和逻辑器件至关重要。传统的轨道调节工作取决于外部场，例如电场，温度场和应力场。这项工作提出了一种新的轨道调制策略，通过修改掺入氮（N）的FM / MO界面的配位环境。通过在N ₂处制备Fe / MgO双层在大气中，N原子占据了Fe晶格的间隙位置，这引起了Fe / MgO界面上的电荷重新分布，并随着平面外轨道占有率的增加，触发了Fe的突出轨道重构。因此，轨道磁被有效地调谐，这使界面磁各向异性能显着增强了0.6 erg cm ^-2。并实现了从面内到垂直方向的广泛磁各向异性可调性。此外，用于保持垂直磁各向异性的Fe厚度从小于1纳米扩展到3纳米，这有利于提高器件的信噪比和纳米级稳定性。这些发现为轨道工程提供了一种与外场无关的策略，可用于定制FM / MO异质接口的受控性能，这实际上促进了磁存储和逻辑设备的发展。

更新日期：2018-12-10

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